[1] F. Machuca,Y. Sun,Z. Liu et al.. Prospect for high brightness III-nitride electron emitter[J]. J. Vac. Sci. Technol. B,2000,18(6):3042-3046

[2] Z. Liu,F. Machuca,P. Pianetta et al.. Electron scattering study within the depletion region of the GaN(0001) and the GaAs (100) surface[J]. Appl. Phys. Lett.,2004,85(9):1541-1543

[3] O. Siegmund,J. Vallerga,J. Mcphate et al.. Development of GaN photocathodes for UV detectors[J]. Nucl. Instrum. Meth. A,2006,567(1):89-92

[4] J. Stock,G. Hilton,T. Norton et al.. Progress on development of UV photocathodes for photon-counting applications at NASA GSFC[C]. SPIE,2005,5898:106-109

[5] M. P. Ulmera,B. W. Wesselsb,B. Hanb et al.. Advances in wide-band-gap semiconductor based photocathode devices for low light level applications[C]. SPIE,2003,5164:144-154

[6] Zhu Ying,Chang Benkang,Liu Lei. Influence of the frame integral time to detecting distance of low light level-TV[J]. Chinese J. Lasers,2008,35(2):259-262

[7] Oswald H. W. Siegmund. High-performance microchannel plate detectors for UV/visible astronomy[J]. Nuc. Instrum. Meth. A,2004,525(1-2):12-16

[8] F. S. Shahedipour,M. P. Ulmer,B. W. Wessels et al.. Efficient GaN photocathodes for low-level ultraviolet signal detection[J]. IEEE J. Quantum Electron.,2002,38(4):333-335

[9] C. I. Wu,A. Kahn. Negative electron affinity and electron emission at cesiated GaN and AlN surfaces[J]. Appl. Surf. Sci.,2000,162-163(1-4):250-255

[10] Xiaoqing Du,Benkang Chang,Guihua Wang. Experiment and analysis of (Cs,O) activation for GaAs photocathode[C]. SPIE,2002,4919:83-90

[11] Du Xiaoqing,Chang Benkang,Qian Yunsheng et al.. Measurement and analysis of spectral response characteristic of transmission-mode GaAs photocathode before and after indium seal[J]. Acta Optica Sinica,2006,26(4):536-540

[12] Zou Jijun,Chen Huailin,Chang Benkang et al.. Study of relation between surface electron escape probability of GaAs photocathode and incident photon wavelength[J]. Acta Optica Sinica,2006,26(9):1400-1403

[13] Zhang Junqin,Yang Yintang,Lu Yan et al.. Simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetector[J].Chinese J. Lasers,2008,35(4):509-514

[14] Liu Guodong,Wang Guibing,Fu Bo et al.. Ultrafast pump-probe reflectivity study of carrier dynamics in silicon surface[J]. Chinese J. Lasers,2008,35(9):1365-1369

[15] XiaoqingDu,Benkang Chang. Angle-dependent X-ray photoelectron spectroscopy study of the mechanisms of “high-low temperature” activation of GaAs photocathode[J]. Appl. Surf. Sci.,2005,251(1-4):267-272