• Infrared and Laser Engineering
  • Vol. 51, Issue 5, 20210416 (2022)
Yinan Zhang1、2, Wen Sun1、2、*, Defeng Mo1、2, Qinfei Xu1、2, and Xue Li1、2
Author Affiliations
  • 1Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2Key Laboratory of Infrared Imaging Materials and Devices, Chinese Academy of Sciences, Shanghai 200083, China
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    DOI: 10.3788/IRLA20210416 Cite this Article
    Yinan Zhang, Wen Sun, Defeng Mo, Qinfei Xu, Xue Li. Laser marking process on transparent materials[J]. Infrared and Laser Engineering, 2022, 51(5): 20210416 Copy Citation Text show less
    Measured ln(Ep) versus D2 and fitting results
    Fig. 1. Measured ln(Ep) versus D2 and fitting results
    Radial distribution of laser energy density based on fitting results
    Fig. 2. Radial distribution of laser energy density based on fitting results
    Measured output spot diameter versus defocus distance of laser processing head
    Fig. 3. Measured output spot diameter versus defocus distance of laser processing head
    Relative energy density versus defocus distance of output spot of laser processing head
    Fig. 4. Relative energy density versus defocus distance of output spot of laser processing head
    Effects of laser beam scanning angle of laser processing head on the geometry deviation of marking position
    Fig. 5. Effects of laser beam scanning angle of laser processing head on the geometry deviation of marking position
    Macro photo of laser marking on IR Conning glass at different focusing depths
    Fig. 6. Macro photo of laser marking on IR Conning glass at different focusing depths
    Photo of laser marking on the upper surface at relative laser power of 9% and 8% with one scan
    Fig. 7. Photo of laser marking on the upper surface at relative laser power of 9% and 8% with one scan
    NameParametersRemarks
    Wavelength515 (Green) 1030 nm Yb: YAG doubling
    Average laser power/W151%-100% available
    Pulse width/ps<10Picosecond pulse
    Maximum single pulse energy/μJ 751%-100% available
    Range of repeat frequency/kHz200-400Set 200 kHz on this equipment
    Beam quality (M2) <1.3Gauss distribution
    Table 1. Laser parameters
    NameParameter
    Designed operation wavelength/nm515-540
    Effective focal length/mm104.7
    Working distance/mm138.5
    Maximum scan angle/(°)13.1
    Scan area/mm246×46
    Laser spot diameter/μm10
    Table 2. Linos F-Theta-Ronar lens and galvanometer scanning parameters of laser processing
    No.Focus position/mmEye observationMicroscope observationRemarks
    12ClearClear-two marksUpper surface
    21.5ClearClear-two marks
    31ClearClear-two marks
    40.5ClearClear-two marks
    50.4ClearClear-two marks
    60.3ClearClear-two marks, nearly on the same plane
    70.2ClearClear-one mark
    80.1ClearClear-one mark
    90ClearClear-one markLower surface
    10−0.1ClearFaint-one mark
    11−0.2FaintFaint-one mark
    12−0.3InvisibleInvisible
    Table 3. Initial test result of ps laser marking on IR Corning glass
    Laser powerFocus positionMarking characteristicGeometry deviationMarking effectEvaluation
    LargerClose to upper surfaceExtend from upper surface to lower surfaceLittleEtching too more, none geometry deviation×
    LargerMiddleExtend from middle to both upper and lower surfaceMediumEtching even more, have geometry deviation×
    LargerLower surfaceExtend from lower surface to upper surfaceLargeEtching too more, have geometry deviation×
    AppropriateClose to upper surfaceLess extend from upper surface to lower surfaceNoneEtching suitable, no geometry deviation
    AppropriateMiddleLess extend from middle to upper and lower surfaceMediumEtching suitable, have geometry deviation×
    AppropriateLower surfaceLess extend from lower surface to upper surfaceLargeEtching suitable, have geometry deviation×
    Table 4. Result and strategy of marking on transparent sample
    Yinan Zhang, Wen Sun, Defeng Mo, Qinfei Xu, Xue Li. Laser marking process on transparent materials[J]. Infrared and Laser Engineering, 2022, 51(5): 20210416
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