• Microelectronics
  • Vol. 51, Issue 4, 487 (2021)
XU Qifei, MAO Shuai, FENG Xudong, MING Xin, and ZHANG Bo
Author Affiliations
  • [in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.200476 Cite this Article
    XU Qifei, MAO Shuai, FENG Xudong, MING Xin, ZHANG Bo. A Buck-Boost Negative Voltage Circuit for Turning-Off Depletion-Mode GaN Devices[J]. Microelectronics, 2021, 51(4): 487 Copy Citation Text show less

    Abstract

    A buck-boost negative shutdown voltage generation circuit was designed. By introducing a dynamically adjustable off-time timing module, a segmented current-limit module and a ripple based high speed detection module, a stable negative gate voltage supply was achieved during the fast switching of depleted GaN devices, which effectively eliminated the occurrence of Miller open when depletion-mode GaN devices were used in high-voltage applications. The circuit was designed and simulated in a 035 μm BCD process. The results showed that the circuit could output stably a negative voltage of -14 V in a wide input range, the operating efficiency could reach 80%~87% under 20~130 mA constant load current. The output voltage of GaN device kept stable during gate switches switching at 05~1 MHz operating frequency. This circuit met the needs of high voltage applications.
    XU Qifei, MAO Shuai, FENG Xudong, MING Xin, ZHANG Bo. A Buck-Boost Negative Voltage Circuit for Turning-Off Depletion-Mode GaN Devices[J]. Microelectronics, 2021, 51(4): 487
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