• Opto-Electronic Engineering
  • Vol. 34, Issue 7, 76 (2007)
[in Chinese]1, [in Chinese]2, [in Chinese]1, and [in Chinese]1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Confirmation of new photodetector and its fill factor[J]. Opto-Electronic Engineering, 2007, 34(7): 76 Copy Citation Text show less
    References

    [1] Cheng-Hsiao Lai,Ya-Chin King,Shi-Yu Huang.A 1.2-V 0.25-/spl mu/m clock output pixel architecture with wide dynamic range and self-offset cancellation[J].IEEE Sensors Journal,2006,6(2):398-405.

    [3] Sunetra K Mendis,Sabrina E Kemeny,Russell C Gee,et al.CMOS Active Pixel Image Sensors for Highly Integrated Imaging Systems[J].Journal of Solid-State Circuits,1997,32(2):187-190.

    [4] ZENG Yun,JIN Xiang-liang,YAN Yong-hong,et al.Numerical Simulation of BJMOSFET on Current-Voltage Characteristics[J].Chinese Journal of Semiconductors,2000,21(11):1069-1074.

    [5] JIN Xiang-liang,CHEN Jie,QIU Yu-lin.Numerical Simulation and Analysis of Bipolar Junction Photogate Transistor for CMOS Image Sensor[J].Chinese Journal of Semiconductors,2003,24(3):250-254.

    [7] Toshihisa Watabe.New Signal Readout Method for Ultrahigh-sensitivity CMOS image sensor[J].IEEE Trans.on Electron Device,2003,50(1):63-69.

    [8] Igor Shcherback,Orly Yadid-Pecht.Photoresponse Analysis and Pixel Shape Optimization for CMOS Active Pixel Sensors[J].IEEE Trans.Electron Device,2003,50(1):12-18.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Confirmation of new photodetector and its fill factor[J]. Opto-Electronic Engineering, 2007, 34(7): 76
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