[1] Malchow Douglas S, Brubaker Robert M, Hansen Marc P. Development of linear array ROIC for InGaAs detector arrays with wavelength response to 2.5μm microns for NIR spectroscopy and machine vision［C］. Proc. of SPIE,2008,6940,69402V-1-11.

[2] Porod W, Ferry D K. Modification of the virtual-crystal approximation for ternary Ⅲ-Ⅴ compounds［J］. Phys. Rev. B,1983,27(4):2587-2589.

[3] Vander A R J, Hoogeveen R W M, Spruijt H J, et al. Low-noise InGaAs Infrared (1.0~2.4 μm) focal plane arrays for SCIAMACHY［C］. Proc. of SPIE,Vol.2957:54-65.

[4] Zhang Yonggang, Gu Yi, et al. Wavelength extended InGaAs/InAlAs /InP photodetectors using n-on-p configuration optimized for back illumination［J］. Infrared Physics ＆ Technology,2009(52):52-56.

[5] Robert F Pierret. Semiconductor Device Fundamentals［M］. Publishing House of Electronics Industry,2006,197-198.

[6] Howard W.Yoon, etc. Performance comparisons of InGaAs, extended InGaAs, and short-wave HgCdTe detectors between 1 m and 2.5 μm［C］. Proc. of SPIE,2006,Vol.6297.

[7] Goetz K-H, Bimberg D, Jurgensen H, et al. Optical and crystallographic properties and impurity incorporation of GaxIn1-xAs (0.44＜x＜0.49) grown by liquid phase epitaxy［J］. J. Appl. Phys.,1983,54(8):4543-4552.

[8] Zielinski E, Schweizer H, Streubel K, et al. Excitonic transitions and exciton damping processes in InGaAs/InP［J］. J. Appl. Phys.,1986,59(6):2196-2204.