• Photonics Research
  • Vol. 6, Issue 2, 72 (2018)
Kangdi Niu1, Ruyi Sun1, Qingyun Chen1, Baoyuan Man1, and Huanian Zhang1、2、*
Author Affiliations
  • 1Shandong Provincial Key Laboratory of Optics and Photonic Devices, School of Physics and Electronics, Shandong Normal University, Jinan 250014, China
  • 2Institute of Data Science and Technology, Shandong Normal University, Jinan 250014, China
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    DOI: 10.1364/PRJ.6.000072 Cite this Article Set citation alerts
    Kangdi Niu, Ruyi Sun, Qingyun Chen, Baoyuan Man, Huanian Zhang. Passively mode-locked Er-doped fiber laser based on SnS2 nanosheets as a saturable absorber[J]. Photonics Research, 2018, 6(2): 72 Copy Citation Text show less

    Abstract

    In this paper, tin disulfide (SnS2), a two-dimensional (2D) n-type direct bandgap layered metal dichalcogenide with a gap value of 2.24 eV, was employed as a saturable absorber. Its appearance and nonlinear saturable absorption characteristics were also investigated experimentally. SnS2-PVA (polyvinyl alcohol) film was successfully prepared and employed as a mode-locker for achieving a mode-locked Er-doped fiber laser with a pulse width of 623 fs at a pulse repetition rate of 29.33 MHz. The results prove that SnS2 nanosheets will have wide potential ultrafast photonic applications due to their suitable bandgap value and excellent nonlinear saturable absorption characteristics.
    T(z)=[1α0LIsIs+I0/(1+z2/z02)]/(1α0L),(1)

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    T(z)=1βI0Leff22(1+z2/z02),(2)

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    Leff=(1eα0L)/α0,(3)

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    Kangdi Niu, Ruyi Sun, Qingyun Chen, Baoyuan Man, Huanian Zhang. Passively mode-locked Er-doped fiber laser based on SnS2 nanosheets as a saturable absorber[J]. Photonics Research, 2018, 6(2): 72
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