[1] Gfroerera T H,Priestley L P,Fairleyb M F. Temperature dependence of nonradiative recombination in low-band gap InxGa1-xAs/InAsyP1-y double heterostructures grown on InP substrates [J].J. Appl. Phys.,2003,94(3): 1738-1743.
[2] Borchert B,David K,Stegmuller B,et al. 1.55 m gain-coupled quantum-well distributed feedback lasers with high single-mode yield and narrow linewidth [J].IEEE Transactions Photonics Technology Lett.,1991,3(11): 955-957.
[3] O'Gorman J,Levi A F J,Tanbun-Ek T. Temperature dependence of long wavelength semiconductor lasers [J].Appl. Phys. Lett.,1991,60(9): 1058-1060.
[4] Metzger W K,Wanlass M W,Ellingson R J. Auger recombination in low-band-gap n-type InGaAs [J].Appl. Phys. Lett.,2001,79(20): 3272-3274.
[5] Levon,Asryan V,Luryi S. Temperature-insensitive semiconductor laser [J].Wiley,2002,219-230.
[6] O'Reilly E P,Silver M. Temperature sensitivity and high temperature operation of long wavelength semiconductor lasers [J].Appl. Phys. Lett.,1993,63(24): 3318-3320.
[7] Haug A. Theory of the temperature dependence of the threshold current of an InGaAsP laser [J].IEEE J. of Quantum Electronics,1985,QE-21(6): 716-718.
[8] Hoffman D,Hood A,Wei Y. Negative luminescence of long-wavelength InAs/GaSb superlattice photodiodes [J].Appl. Phys. Lett.,2005,87(201103): 1-3.