• Chinese Journal of Quantum Electronics
  • Vol. 31, Issue 6, 690 (2014)
Chun-yu XU*, Meng SHI, and Ke-zhu YAN
Author Affiliations
  • [in Chinese]
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    DOI: 10.3969/j.issn.1007-5461.2014.06.008 Cite this Article
    XU Chun-yu, SHI Meng, YAN Ke-zhu. Effect of annealing on crystal structure and photoluminescence of Eu3+ doped ZnO thin films[J]. Chinese Journal of Quantum Electronics, 2014, 31(6): 690 Copy Citation Text show less
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    [7] Huang C Y, Lee Y J, Lin T Y, et al. Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme [J]. Optics Letters, 2014, 39(4): 805-808.

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    XU Chun-yu, SHI Meng, YAN Ke-zhu. Effect of annealing on crystal structure and photoluminescence of Eu3+ doped ZnO thin films[J]. Chinese Journal of Quantum Electronics, 2014, 31(6): 690
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