Thermally tunable GeSi electro-absorption modulator with a wide effective operating wavelength range

Yufei Liu; Jialiang Sun; Xinyu Li; Shuxiao Wang; Wencheng Yue; Yan Cai; Mingbin Yu

doi:10.1364/PRJ.488474

[1] C. Kachris, I. Tomkos. A survey on optical interconnects for data centers. Commun. Surveys Tuts., 14, 1021-1036(2012).

[2] Y. Liu, S. Wang, J. Wang, X. Li, M. Yu, Y. Cai. Silicon photonic transceivers in the field of optical communication. Nano Commun. Netw., 31, 100379(2022).

[3] Y. Liu, J. Sun, R. Song, X. Li, J. Wang, S. Wang, Y. Yu, W. Yue, Y. Cai, M. Yu. 80 Gb/s NRZ Ge waveguide electro-absorption modulator. Opt. Express, 30, 34276-34286(2022).

[4] J. Zhou, J. Wang, L. Zhu, Q. Zhang. Silicon photonics for 100 Gbaud. J. Lightwave Technol., 39, 857-867(2020).

[5] X. Li, Y. Liu, R. Song, C. Li, S. Wang, W. Yue, Z. Tu, X. Chen, Y. Cai, W. Wang, M. Yu. PIC-integrable high-responsivity germanium waveguide photodetector in the C+L band. Opt. Express, 31, 3325-3335(2023).

[6] X. Li, J. Wang, Y. Liu, J. Chen, Y. Du, W. Wang, Y. Cai, J. Ma, M. Yu. Design of Ge_1-xSn_x-on-Si waveguide photodetectors featuring high-speed high-sensitivity photodetection in the C- to U-bands. Appl. Opt., 59, 7646-7651(2020).

[7] M. Romagnoli, S. Marconi, M. A. Giambra, A. Montanaro, V. Mišeikis, S. Soresi, S. Tirelli, P. Galli, F. Buchali, W. Templ, C. Coletti, V. Sorianello. High-data-rate photothermal effect graphene detector integrated in a SOI waveguide. Proc. SPIE, 11711, 1171106(2021).

[8] W. Shi, Y. Tian, A. Gervais. Scaling capacity of fiber-optic transmission systems via silicon photonics. Nanophotonics, 9, 4629-4663(2020).

[9] R. B. Priti, O. Liboiron-Ladouceur. A reconfigurable multimode demultiplexer/switch for mode-multiplexed silicon photonics interconnects. IEEE J. Sel. Top. Quantum Electron., 24, 8300810(2018).

[10] W. D. Sacher, T. Barwicz, B. J. F. Taylor, J. K. S. Poon. Polarization rotator-splitters in standard active silicon photonics platforms. Opt. Express, 22, 3777-3786(2014).

[11] A. Bozzola, L. Carroll, D. Gerace, I. Cristiani, L. C. Andreani. Optimising apodized grating couplers in a pure SOI platform to −0.5 dB coupling efficiency. Opt. Express, 23, 16289-16304(2015).

[12] G. T. Reed, S. Liu, D. J. Thomson, W. Zhang, F. Meng, X. Yan, C. G. Littlejohns, H. Du, W. Cao, M. Banakar, M. Ebert, V. Jeyaselvan, D. Tran, P. Petropoulos, L. Ke. Beyond 100 Gb/s from a single silicon MZI modulator. CLEO: Science and Innovations, SM5G-1(2022).

[13] M. Sakib. Micro-ring modulators for next generation energy-efficient optical networks beyond 100 Gbaud. Proc. SPIE, PC12007, PC1200706(2022).

[14] S. A. Srinivasan, P. Verheyen, R. Loo, I. D. Wolf, M. Pantouvaki, G. Lepage, S. Balakrishnan, W. Vanherle, P. Absil, J. V. Campenhout. 50 Gb/s C-band GeSi waveguide electro-absorption modulator. Optical Fiber Communication Conference, Tu3D.7(2016).

[15] Z. Liu, X. Li, C. Niu, J. Zheng, C. Xue, Y. Zuo, B. Cheng. 56 Gbps high-speed Ge electro-absorption modulator. Photon. Res., 8, 1648-1652(2020).

[16] D. Feng, S. Liao, H. Liang, J. Fong, B. Bijlani, R. Shafiiha, B. J. Luff, Y. Luo, J. Cunningham, A. V. Krishnamoorthy, M. Asghari. High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide. Opt. Express, 20, 22224-22232(2012).

[17] H. Xiao, D. Wu, Y. Zhang, H. Zhang, D. Chen, M. Liu, J. Liu, L. Wang, X. Xiao, S. Yu. 110 Gbit/s NRZ and 160 Gbit/s PAM-4 GeSi electro-absorption modulator. Optical Fiber Communications Conference and Exhibition (OFC), 1-3(2022).

[18] S. A. Srinivasan, C. Porret, S. Balakrishnan, Y. Ban, R. Loo, P. Verheyen, J. Van Campenhout, M. Pantouvaki. 60 Gb/s waveguide-coupled O-band GeSi quantum-confined Stark effect electro-absorption modulator. Optical Fiber Communication Conference, Tu1D-3(2021).

[19] D. Feng, W. Qian, H. Liang, C. Kung, Z. Zhou, Z. Li, J. S. Levy, R. Shafiiha, J. Fong, B. J. Luff, M. Asghari. High-speed GeSi electroabsorption modulator on the SOI waveguide platform. IEEE J. Sel. Top. Quantum Electron., 19, 64-73(2013).

[20] J. Sun, R. Kumar, M. Sakib, J. B. Driscoll, H. Jayatilleka, H. Rong. A 128 Gb/s PAM4 silicon microring modulator with integrated thermo-optic resonance tuning. J. Lightwave Technol., 37, 110-115(2018).

[21] G. Li, X. Zheng, J. Yao, H. Thacker, I. Shubin, Y. Luo, K. Raj, J. E. Cunningham, A. V. Krishnamoorthy. 25 Gb/s 1V-driving CMOS ring modulator with integrated thermal tuning. Opt. Express, 19, 20435-20443(2011).

[22] A. Ribeiro, S. Dwivedi, W. Bogaerts. A thermally tunable but athermal silicon MZI filter. 18th European Conference on Integrated Optics (ECIO), o-25(2016).

[23] G. Li, X. Zheng, H. Thacker, J. Yao, Y. Luo, I. Shubin, K. Raj, J. E. Cunningham, A. V. Krishnamoorthy. 40 Gb/s thermally tunable CMOS ring modulator. The 9th International Conference on Group IV Photonics (GFP), 1-3(2012).

[24] A. Masood, M. Pantouvaki, D. Goossens, G. Lepage, P. Verheyen, J. V. Campenhout, P. Absil, D. Van Thourhout, W. Bogaerts. Fabrication and characterization of CMOS-compatible integrated tungsten heaters for thermo-optic tuning in silicon photonics devices. Opt. Mater. Express, 4, 1383-1388(2014).

[25] A. Masood, M. Pantouvaki, D. Goossens, G. Lepage, P. Verheyen, D. Van Thourhout, P. Absil, W. Bogaerts. CMOS-compatible tungsten heaters for silicon photonic waveguides. The 9th International Conference on Group IV Photonics (GFP), 234-236(2012).

[26] Q. Fang, J. Song, X. Luo, L. Jia, M. Yu, G. Lo, Y. Liu. High efficiency ring-resonator filter with NiSi heater. IEEE Photon. Technol. Lett., 24, 350-352(2011).

[27] S. Gao, H. Lin, L. Zhou, L. Liu, M. He, J. Xu, L. Chen, Y. Luo, X. Cai. Power-efficient thermal optical tunable grating coupler based on silicon photonic platform. IEEE Photon. Technol. Lett., 31, 537-540(2019).

[28] L. Wu, Y. Zhou, Y. Cai, X. Cao, R. Wang, M. Qi, J. Fong, D. Feng, A. Wu. Design of a broadband Ge_1−xSi_x electro-absorption modulator based on the Franz-Keldysh effect with thermal tuning. Opt. Express, 28, 7585-7595(2020).

[29] J. Fujikata, M. Noguchi, R. Katamawari, K. Inaba, H. Ono, D. Shimura, Y. Onawa, H. Yaegashi, Y. Ishikawa. High-performance Ge/Si electro-absorption optical modulator up to 85°C and its highly efficient photodetector operation. Opt. Express, 31, 10732-10743(2023).

[30] A. Tsiara, S. A. Srinivasan, S. Balakrishnan, M. Pantouvaki, P. Absil, J. Van Campenhout, K. Croes. Electrical and optical reliability analysis of GeSi electro-absorption modulators. Optical Fiber Communication Conference, M2A.5(2020).

[31] A. Frova, P. Handler. Franz-Keldysh effect in the space-charge region of a germanium p−n junction. Phys. Rev., 137, A1857-A1861(1965).

[32] J. Liu. GeSi Photodetectors and Electro-Absorption Modulators for Si Electronic-Photonic Integrated Circuits(2007).

[33] Y. P. Varshni. Temperature dependence of the energy gap in semiconductors. Physica, 34, 149-154(1967).

[34] S. A. Srinivasan, M. Pantouvaki, S. Gupta, H. T. Chen, P. Verheyen, G. Lepage, G. Roelkens, K. Saraswat, D. Van Thourhout, P. Absil, J. V. Campenhout. 56 Gb/s germanium waveguide electro-absorption modulator. J. Lightwave Technol., 34, 419-424(2016).