[1] TAKAGI K,SHIRAI S,TATSUOKA Y,et al.120℃10-Gb/s uncooled direct modulated 1.3 μm AIGaInAs MQW DFB laser diodes[J].IEEE Photonics Technology Letters,2004,16(11):2415-2417.
[2] FENG H,MAKINO T,OGITA S,et al.40 Gb/s electroabsorption-modulator-integrated DFB laser with optimized design[C]//OpticaI Fiber Communication Conference,2002.
[5] ZAH C E,BHAT R,PATHAK B N,et al.High-performance uncooled 1.3 μm AlχGayIn1-χ-yAs/InP strained-layer quantumwell lasers for subscriber loop appficafions[J].IEEE Journal of Quantum Electronics,1994,30(2):511-521.
[6] SELMIC S R,CHOU T M,Sm J P,et al.Design and characterization of 1.3 μm AlGalnAs-InP multiple-quantum-well lasers[J].IEEE Journal of Selected Topics in Quantum Electronics,2001,7(2):340-349.
[7] AOKI M,TSUCHIYA T,NAKAHARA K,et al.High-power and wide-temperature-range operations of lnGaAsP-InP strained MQW lasers with reverse-mesa ridge-waveguide structure[J].IEEE Photonics Technology Letters,1995,7(1):13-15.
[8] LU H,BLAUUW C,MAKINO T.Single-mode operation over a wide temperature range in 1.3 μm InGaAsP/InP distributed feedback lasers[J].Journal of Lightwave Technology,1996,14(5):851-859.
[11] ARIMOTO H,SHIMIZU J,SHIRAI M,et al.Wide temperaturc range,from O to 85℃,operation of a 1.55μm,40 Gbit/s InGaAIAs electro-absorption optical modulator[J].Electronics Letters,2005,41(1):35-37.
[12] HAwDON B J,TUTKEN T.HANGLEITER A,et al.Direct comparison of InGaAs/InGaAlAs and InCcaAs/lnGaAsP quantum well modulators[J].Electronics Letters,1993,29(8):705-707.
[13] SUN C Z,ZHOU J B,XIONG B,et al.Vertical and smooth etching of InP by Cl2/CH4/Ar inductively coupled plasma at room temperature[J].Chinese Physics Letters,2003,20(8):1312-1314.
[14] XIONG B,WANG J,ZHANG L,et al.High-speed(＞40 GHz)integrated electroabsorption modulator based on identical epitaxial layer approach[J].IEEE Photonic Technology Letters,2005,17(2):327-329.
