• Infrared and Laser Engineering
  • Vol. 30, Issue 5, 382 (2001)
[in Chinese]1、*, [in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]2, and [in Chinese]2
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect of technologic parameters on particle diameters of nano-Si produced by LICVD[J]. Infrared and Laser Engineering, 2001, 30(5): 382 Copy Citation Text show less
    References

    [1] L T Canham. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers[J]. Applied Physics Letters, 1990,57(9):1046-1048.

    [2] V Lehmann, U Gsele. Porous silicon formation: A quantum wire effect[J]. Applied Physics Letters, 1991,58(8):856-858.

    [3] R Okada, S Iijima. Oxidation property of silicon small particles[J]. Applied Physics Letters, 1991,58(15):1662-1663.

    [4] E Werwa, A A Seraphein, L A Chiu, Chuxin Zhou, K D Kolenbrander. Synthesis and processing of silicon manocrystallites using a pulsed laser ablation supersonic expansion method[J]. Applied Physics Letters, 1994,64(14):1821-1823.

    [5] W R Cannon, S C Danforth, J S Haggerty, R A Marra. Sinterable ceranic powders from laser-driven reaction:I, process description and modeling[J]. Journal of the American Ceramic Society, 1982,65(7):324-330.

    [6] W X Wang, S H Liu, Y B Mei, et al. Study on the preparation techniques of laser-induced chemical vapor deposited nanosized silicon nitride[J]. Applied Laser, 1995,15(3): 8-11.

    [7] G Lucovsky, R J Nemanich, J C Knights. Structural intepretaiton of the vibrational spectra of a-Si:H alloys[J]. Physical Review B, Condensed Matter, 1979,19(4):2064-2073.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Effect of technologic parameters on particle diameters of nano-Si produced by LICVD[J]. Infrared and Laser Engineering, 2001, 30(5): 382
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