Achieving higher photoabsorption than group III-V semiconductors in ultrafast thin silicon photodetectors with integrated photon-trapping surface structures

Wayesh Qarony; Ahmed S. Mayet; Ekaterina Ponizovskaya Devine; Soroush Ghandiparsi; Cesar Bartolo-Perez; Ahasan Ahamed; Amita Rawat; Hasina H. Mamtaz; Toshishige Yamada; Shih-Yuan Wang; M. Saif Islam

doi:10.1117/1.APN.2.5.056001

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