NOVEL COMPOSITE-CHANNEL Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMT MMIC VCO WITH LOW PHASE NOISE

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

[2] Lee J W,Eastman L F,Webb K J.A Gallium-nitride pushpull microwave power amplifier[J].IEEE Transactions on Microwave Theory and Thchniques,2003,51 (11):2243-2249.

[3] Cheng Z Q,Liu J,Zhou Y G,et al.Broadband microwave noise characteristics of high-linearity composite-channel Al0.3GaN0.7N/Al0.05GaN0.95N/GaN HEMTs[J].IEEE Electron Device Letters,2005,26(8):521-523.

[4] Lee J W,Kuliev A,Kumar V,et al.Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplisiers[J].IEEE Transactions on Microwave Theory and Thchniques,2004,14 (6):259-261.

[5] Lu W,Kumar V,Piner E L,et al.DC,RF,and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration[J].IEEE Trans.Electron Devices,2003,50(4):1069-1074.

[6] Xu H T,Sanabria C,Chini A,et al.A C-band high-dynamic range GaN HEMT low-noise amplifier[J].IEEE Microwave and Wireless Components Lett.,2004,14 (6):262-264.

[7] Ellis G A,Moon J S,Wong D,et al.Wideband AlGaN/GaN HEMT MMIC low noise amplifier[C].Texas USA:IEEE International Microwave Symposium Digest,2004,153-156.

[8] Welch R,Kumar V,Neidhard B,et al.Low noise hybrid amplifier using AlGaN/GaN power HENT devices[C].Texas USA:Baltimoare Md IEEE GaAs IC Symposium Digest,2001,153-155.

[9] Cha S,Chung Y H,Wojtowicz M,et al.Wideband AlGaN/GaN HEaT low noise amplifier for highly survivable receiver electronics[C].Texas USA:IEEE International Microwave Symposium Digest,2004,829-832.

[10] Xu H T,Sanabria C,Nadia K.et al.Low phase-noise 5GHz AlGaN/GaN HEMT oscillator integrated with Bax Sr1-xTiO3 thin films[C].Texas USA:IEEE MTT-S Dig.,2004,1509-1512.

[11] Sanabria C,Xu H T,Heikman S,et al.A GaN differential oscillator with improved harmonic performance[J].IEEE Microwave and Wireless Components Letters,2005,15(7):463-465.

[12] Kaper V S,Tilak V,Kim H,et al.High-power monolithic AlGaN/GaN HEMT oscillator[J].IEEE Journal of Solidstate Circuits,2003,38(9):1457-1461.

[13] Shealy J B,Smart J A,Shealy J R.low-phase noise AlGaN/GaN FET-based voltage controlled oscillators (VCOs)[J].IEEE Microwave and Wireless Components Letters.2001,11(6):244-245.

[14] Kaper V S,Thompson R M,Prunty T R,et al.Signal generation,control,and frequency conversion AlGaN/GaN HEMT MMICs[J].IEEE Transactions on Microwave Theory and Thchniques,2005,53(1):55-65.

[15] Chu C S,Zhou Y G,Chen K J,et al.Q-factor characterization of radio-frequency GaN-based metal-semiconductor -metal planar inter-digitated varactors[J].IEEE Electron Device Letters,2005,26 (7) 432-434.