Da-Nong ZHENG, Xiang-Bin SU, Ying-Qiang XU, Zhi-Chuan NIU. High gain and low dark current AlInAsSb avalanche photodiodes grown by quaternary digital alloys[J]. Journal of Infrared and Millimeter Waves, 2021, 40(2): 172
- Journal of Infrared and Millimeter Waves
- Vol. 40, Issue 2, 172 (2021)
Fig. 1. Shutter sequences in a period of AlInAsSb digital alloy lattice-matched to GaSb for MEE growth method.
Fig. 2. Schematic cross section of AlInAsSb DA SAGCM APD
Fig. 3. (a) HRXRD of Al0.7In0.3AsSb DA layer, (b) AFM of Al0.7In0.3AsSb DA layer
Fig. 4. (a) Epitaxial structure of AlxIn1-xAsSb DA grading layer, (b) HRXRD of AlxIn1-xAsSb DA grading layer, (c) AFM of AlxIn1-xAsSb DA grading layer
Fig. 4. (a) HRXRD of Al0.4In0.6AsSb DA layer, (b) AFM of Al0.4In0.6AsSb DA layer
Fig. 6. (a) Dark current, photocurrent, multiplication factor versus reverse bias of a 200 μm-diameter AlInAsSb DA SAGCM APD at room temperature, (b) measured capacitance versus bias of a typical 200 μm-diameter AlInAsSb DA SAGCM APD at room temperature
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Table 1. Thickness of each layer in a period of AlxIn1-xAsySb1-ydigital alloy
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Table 2. Epitaxial structure of AlInAsSb DA SAGCM APD
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