Two type II superlattices (SLs): InAs(2ML)/GaSb(8ML) and InAs(8ML)/GaSb(8ML) were grown on GaAs substrates by molecular-beam epitaxy. High resolution X-ray diffraction showed the periods of the two SLs were 31.2 and 57.3 ， respectively. Room-temperature optical transmittance spectra showed that there were clear absorption edges at 2.1μm and 5μm for the two SLs. The SWIR and MWIR photoconductor devices were fabricated by standard lithography and etched by tartaric acid solution. The spectral response and blackbody tests were carried out at low and room temperatues. The results show that the 50% cutoff wavelengths of the two photoconductors are 2.1μm and 5.0 μm respectively and D* bb is above 2×108 cmHz 1/2 /W for two kinds of photoconductors at 77K. D * bb is above 10 8 cmHz 1/2 /W for SWIR photoconductor at room temperature.