Influence of Ge1-xInxTe Microstructure on Thermoelectric Properties

Xiaoxiao QIU; Xiying ZHOU; Yuntian FU; Xiaomeng SUN; Lianjun WANG; Wan JIANG

doi:10.15541/jim20190641

Journals >Journal of Inorganic Materials >Volume 35 >Issue 8 >Page 916 > Article

Journal of Inorganic Materials
Vol. 35, Issue 8, 916 (2020)

Influence of Ge_1-_xIn_xTe Microstructure on Thermoelectric Properties

Xiaoxiao QIU¹, Xiying ZHOU^1、*, Yuntian FU², Xiaomeng SUN², Lianjun WANG^3、*, and Wan JIANG²

Author Affiliations

¹School of Materials Engineering, Shanghai University of Engineering and Science, Shanghai 201620, China

²State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China

³Engineering Research Center of Advanced Glasses Manufacturing Technology, Ministry of Education, Donghua University, Shanghai 201620, China

show less

DOI: 10.15541/jim20190641 Cite this Article

Xiaoxiao QIU, Xiying ZHOU, Yuntian FU, Xiaomeng SUN, Lianjun WANG, Wan JIANG. Influence of Ge_1-_xIn_xTe Microstructure on Thermoelectric Properties[J]. Journal of Inorganic Materials, 2020, 35(8): 916 Copy Citation Text

show less

1. XRD patterns of Ge_1-_xIn_xTe compounds

Download full size | View in the Article

2. XPS patterns of Ge_1-_xIn_xTe

Download full size | View in the Article

3. EDS mapping of the elements in Ge_0.97In_0.03Te

Download full size | View in the Article

4. Fructure surface SEM images of Ge_1-_xIn_xTe

Download full size | View in the Article

5. Thermoelectric properties of Ge_1-_xIn_xTe

Download full size | View in the Article

6. Heat capacity of Ge_1-_xIn_xTe

Download full size | View in the Article

7. Mechanism of the effect of structure on thermoelectric performance

Download full size | View in the Article

x	a/nm	b/nm	c/nm	V/nm³
0	0.4165	0.4165	1.0667	0.160284
0.01	0.4167	0.4167	1.0656	0.160234
0.02	0.4170	0.4170	1.0639	0.160204
0.03	0.4173	0.4173	1.0627	0.160278
0.05	0.4175	0.4175	1.0604	0.160037
0.10	0.4192	0.4192	1.0449	0.159058

Table 1. Lattice parameters and volume of Ge_1-_xIn_xTe

View in the Article

Element	Atomic number	Mass/%	Normalized quality/%	Atom/%	Abs. error/%
Te	52	64.25	64.28	50.38	1.89
Ge	32	34.24	34.26	47.18	1.91
In	49	1.43	1.46	1.27	0.07

Table 2. Information of different elements of Ge_0.97In_0.03Te

View in the Article

Sample	ρ/(g·cm^-3)	d/%	σ/(×10⁴, S·m^-1)	S/(μV·K^-1)	n_H/(×10²⁰, cm^-3)	m_H/(cm²·V^-1·s^-1)	L₀/(×10^-8, V²·K^-2)
x=0	6.176	99.27	74.92	38.4	16.32	35.31	2.22
x =0.005	6.168	99.00	54.75	49.7	—	—	2.15
x =0.010	6.184	99.16	49.75	54.5	—	—	2.13
x =0.015	6.193	99.20	37.72	64.3	13.05	25.44	2.07
x =0.020	6.185	98.95	30.61	66.8	—	—	2.05
x =0.025	6.170	98.59	26.80	77.9	—	—	2.01
x =0.030	6.183	98.75	22.49	86.0	10.55	22.54	1.98
x =0.050	6.162	97.86	11.47	125	9.818	12.40	1.84
x =0.100	6.240	97.48	1.02	267	4.083	5.521	1.60

Table 3. Electrical transport properties of Ge_1-_xIn_xTe at room temperature

Download Citation

Save the article for my favorites

Paper Information