A method for fabricating metamaterial terahertz devices with laser induced and non-electrolytic plating with copper using a semiconductor laser (405 nm) is proposed. The line width of metal structure fabricated by the method is adjustable, the minimum metal width is 5 μm, and its thickness can be adjusted by copper plating time. Moreover, a fabricated band-stop filter working in terahertz band is measured using terahertz time-domain spectrum. The result is in good agreement with finite-difference time-domain simulation. Fabricated quality of devices meet the design requirements. Fabrication of metamaterial terahertz devices by semiconductor laser induced and non-electrolytic plating possesses the advantages of low energy consumption, low equipment cost and high cost-effective as well.