IFLUENCE OF GRAIN BOUNDARY TUNNELING ON THE RESISTIVITY OF THE VO2 FILMS PREPARED BY SOL-GEL METHOD

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 23 >Issue 4 >Page 317 > Article

Journal of Infrared and Millimeter Waves
Vol. 23, Issue 4, 317 (2004)

IFLUENCE OF GRAIN BOUNDARY TUNNELING ON THE RESISTIVITY OF THE VO2 FILMS PREPARED BY SOL-GEL METHOD

[in Chinese]¹, [in Chinese]¹, and [in Chinese]²

Author Affiliations

¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese]. IFLUENCE OF GRAIN BOUNDARY TUNNELING ON THE RESISTIVITY OF THE VO2 FILMS PREPARED BY SOL-GEL METHOD[J]. Journal of Infrared and Millimeter Waves, 2004, 23(4): 317 Copy Citation Text

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References

[1] Goodenough J B. The two component of the crystallographic transition in VO2[J]. J.Solid State Chem., 1971, 3: 490-499.

[2] Hood P J, DeNatale J F. Millimeter-wave dielectric properties of epitaxial vanadium dioxide thin films[J]. J.Appl.Phys., 1991, 70: 376-381.

[3] Yuan Ningyi, Li Jinhua, Lin Chenglu. Valence reduction procedure from sol-gel V2O5 to VO2 thin films[J]. Applied Surface Science, 2002, 191(1-4): 176-179.

[4] Seto Y W, The electrical properties of polycrystalline silicon films[J]. J.Appl.Phys., 1975, 46: 5247-5254.

CLP Journals

[1] Chen Liulian, Ma Bin, Shi Yongming, Zhai Houming. Characterization of Vanadium Oxide Thin Films Annealed in N₂ Atomosphere with Different Hours[J]. Acta Optica Sinica, 2011, 31(s1): 100103

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