• Chinese Physics B
  • Vol. 29, Issue 8, (2020)
Ying Zan, Yong-Liang Li, Xiao-Hong Cheng, Zhi-Qian Zhao, Hao-Yan Liu, Zhen-Hua Hu, An-Yan Du, and Wen-Wu Wang
Author Affiliations
  • Integrated Circuit Advanced Process Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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    DOI: 10.1088/1674-1056/ab973e Cite this Article
    Ying Zan, Yong-Liang Li, Xiao-Hong Cheng, Zhi-Qian Zhao, Hao-Yan Liu, Zhen-Hua Hu, An-Yan Du, Wen-Wu Wang. High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing[J]. Chinese Physics B, 2020, 29(8): Copy Citation Text show less
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    Ying Zan, Yong-Liang Li, Xiao-Hong Cheng, Zhi-Qian Zhao, Hao-Yan Liu, Zhen-Hua Hu, An-Yan Du, Wen-Wu Wang. High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing[J]. Chinese Physics B, 2020, 29(8):
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