• Acta Physica Sinica
  • Vol. 69, Issue 5, 056301-1 (2020)
Wen-Yu Fang1, Peng-Cheng Zhang1, Jun Zhao1、2, and Wen-Bin Kang1、2、*
Author Affiliations
  • 1School of Public Health and Management, Hubei University of Medicine, Shiyan 442000, Chin
  • 2Hubei Biomedical Detection Sharing Platform in Water Source Area of South to North Water Diversion Project, Shiyan 442000, China
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    DOI: 10.7498/aps.69.20191391 Cite this Article
    Wen-Yu Fang, Peng-Cheng Zhang, Jun Zhao, Wen-Bin Kang. Electronic structure and photocatalytic properties of H, F modified two-dimensional GeTe[J]. Acta Physica Sinica, 2020, 69(5): 056301-1 Copy Citation Text show less
    The optimized geometric structures: (a) side view of GeTe; (b) top view of fH-GeTe; (c) side view of fH-GeTe; (d) side view of hH-GeTe-hF; (e) side view of hF-GeTe-hH; (f) K point path.
    Fig. 1. The optimized geometric structures: (a) side view of GeTe; (b) top view of fH-GeTe; (c) side view of fH-GeTe; (d) side view of hH-GeTe-hF; (e) side view of hF-GeTe-hH; (f) K point path.
    Phonon dispersion: (a) GeTe; (b) fH-GeTe; (c) fF-GeTe; (d) hH-GeTe-hF; (e) hF-GeTe-hH.
    Fig. 2. Phonon dispersion: (a) GeTe; (b) fH-GeTe; (c) fF-GeTe; (d) hH-GeTe-hF; (e) hF-GeTe-hH.
    Variation of the total energy in the molecular dynamics simulation at 500 K for: (a) GeTe; (b) fH-GeTe; (c) fF-GeTe; (d) hH-GeTe-hF; (e) hF-GeTe-hH, during a timescale of 2.5 ps. The insets are the top (left panel) and side (right panel) views of the atomic structure snapshots taken from the molecular dynamics simulation.
    Fig. 3. Variation of the total energy in the molecular dynamics simulation at 500 K for: (a) GeTe; (b) fH-GeTe; (c) fF-GeTe; (d) hH-GeTe-hF; (e) hF-GeTe-hH, during a timescale of 2.5 ps. The insets are the top (left panel) and side (right panel) views of the atomic structure snapshots taken from the molecular dynamics simulation.
    Band structure and density of states: (a) GeTe; (b) fH-GeTe; (c) fF-GeTe; (d) hH-GeTe-hF; (e) hF-GeTe-hH.
    Fig. 4. Band structure and density of states: (a) GeTe; (b) fH-GeTe; (c) fF-GeTe; (d) hH-GeTe-hF; (e) hF-GeTe-hH.
    Electron density difference : (a) GeTe; (b) fH-GeTe; (c) fF-GeTe; (d) hH-GeTe-hF; (e) hF-GeTe-hH.
    Fig. 5. Electron density difference : (a) GeTe; (b) fH-GeTe; (c) fF-GeTe; (d) hH-GeTe-hF; (e) hF-GeTe-hH.
    Reduction and oxidation potentials of CB and VB edges of all chemically decorated GeTe.
    Fig. 6. Reduction and oxidation potentials of CB and VB edges of all chemically decorated GeTe.
    Absorption spectra of all chemically decorated GeTe.
    Fig. 7. Absorption spectra of all chemically decorated GeTe.
    Structure(a/b)/Å θ/(°) ll1l2σEf/eV
    GeTe3.9591.222.761.56
    fH-GeTe5.09119.922.941.601.69–0.08–5.80
    fF-GeTe4.1893.082.881.792.041.58–7.45
    hH-GeTe-hF4.0292.042.971.592.081.56–5.79
    hF-GeTe-hH5.21119.993.011.811.69–0.03–7.74
    Table 1.

    Structural parameters for all chemically decorated GeTe.

    晶体的结构参数及吸附能

    Effective massGeTefH-GeTefF-GeTehH-GeTe-hFhF-GeTe-hH
    $ m_{\rm h}^*/m_0 $0.540.240.231.500.30
    $ m_{\rm e}^*/m_0 $0.520.390.270.910.49
    D1.041.631.171.651.63
    Table 2.

    The effective mass for all chemically decorated GeTe.

    半导体的载流子有效质量

    StructureGeTefH-GeTefF-GeTehH-GeTe-hFhF-GeTe-hH
    $ \chi $5.036.017.236.596.59
    CB/eV–0.370.762.681.741.28
    VB/eV1.422.252.792.442.90
    Table 3.

    Reduction and oxidation potentials of CB and VB edges of all chemically decorated GeTe.

    半导体的导带和价带的带边电势

    Wen-Yu Fang, Peng-Cheng Zhang, Jun Zhao, Wen-Bin Kang. Electronic structure and photocatalytic properties of H, F modified two-dimensional GeTe[J]. Acta Physica Sinica, 2020, 69(5): 056301-1
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