Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes

Yanli ZHAO; Junjie TU; Jingjing XIANG; Ke WEN; Jing XU; Yang TIAN; Qiang LI; Yuchong TIAN; Runqi WANG; Wenyang LI; Mingwei GUO; Zhifeng LIU; Qi TANG

doi:10.1007/s12200-018-0851-8

Journals >Frontiers of Optoelectronics >Volume 11 >Issue 4 >Page 400 > Article

Frontiers of Optoelectronics
Vol. 11, Issue 4, 400 (2018)

Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes

Yanli ZHAO^1、*, Junjie TU¹, Jingjing XIANG², Ke WEN¹, Jing XU¹, Yang TIAN¹, Qiang LI¹, Yuchong TIAN¹, Runqi WANG¹, Wenyang LI¹, Mingwei GUO¹, Zhifeng LIU³, and Qi TANG³

Author Affiliations

¹Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

²Sichuan Branch, China Unicom Network Communications Co., Ltd, Chengdu 610041, China

³Wuhan Aroptics-Tech Co., LTD, Wuhan 430074, China

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DOI: 10.1007/s12200-018-0851-8 Cite this Article

Yanli ZHAO, Junjie TU, Jingjing XIANG, Ke WEN, Jing XU, Yang TIAN, Qiang LI, Yuchong TIAN, Runqi WANG, Wenyang LI, Mingwei GUO, Zhifeng LIU, Qi TANG. Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes[J]. Frontiers of Optoelectronics, 2018, 11(4): 400 Copy Citation Text

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Abstract

Based on the newly proposed temperature dependent dead space model, the breakdown voltage and bandwidth of InP/InGaAs avalanche photodiode (APD) have been investigated in the temperature range from -50 ℃ to 100 ℃. It was demonstrated that our proposed model is consistent with the experimental results. Our work may provide a guidance to the design of APDs with controllably low temperature coefficient.

Keywords

dead space effect grading, charge, and multiplication avalanche phot optical communication separate absorption temperature coefficient

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