This paper presents new results obtained recently in studies of separate confinement structure (SCH) InGaAsP/GaAs lasers. Using Russia′s technology, the InGaAsP/GaAs lasers based on QW structure can be produced by short time liquid phase epitary (STLPE) employing a modified sliding boat technique. The interface abruptness in the InGaAsP/GaAs lasers can be made comparable to the lattice constant. Using 〈100〉 GaAs substrates, InGaAsP/GaAs SCH SQW lasers were fabricated and the followig values of the main parameters were obtained: lasing wavelength λ=808 nm, threshold current density J th =300 A/cm 3, CW power high to 1￣2 W for the laser with stripe width W=100 μm. 1000 h lifetime tests have been performed and the factors which affect the lifetime of the lasers are discussed.