[1] D. Keith Bowen, Brian K. Tanner. High Resolution X-Ray Diffractometry and Topography[M]. London: Taylor & Francis Ltd., 2001. 1～13
[2] Panl F. Fewster, Norman L. Andrew. Strain analysis of X-ray diffraction[J]. Thin Solid Films, 1998, 319: 1～8
[5] M. A. G. Halliwell, M. H. Lyons, M. G. Hiu. The interpretation of X-ray rocking curves from semiconductors device structures[J]. J. Crystal Growth, 1984, 68: 523～531
[8] D. Rosenfeld, V. Garber, V. Ariel et al.. Compositionally graded HgCdTe photodiodes: prediction of spectral response from transmission spectrum and the impact of grading[J]. J. Electron. Mater., 1995, 24(9): 1321～1328
[9] M. O. Mller, R. N. Bicknell-Tassius, G. Landwehr. Theoretical X-ray Bragg reflection widths and reflectivites of Ⅱ-Ⅵ semiconductors[J]. J. Appl. Phys., 1992, 72(11): 5106～5116
[10] W. J. Barterls, J. Hornstra, D. J. W. Lobeek. X-ray diffraction of multilayers and superlattices[J]. Acta. Cryst., 1986, A42: 539～545
[11] Holy V, Pietsch U, Baumbach T. High Resolution X-Ray Scattering from Thin Films and Multilayers[M]. Berlin: Springer Verlag, 1999. 81～111
[13] Kun Liu, J. H. Chu, Biao Li et al.. Measurement of composition in Hg1-xCdxTe epilayers[J]. Appl. Phys. Lett., 1994, 64(21): 104～106
[14] J. A. Ibers, W. C. Hamilton. International Tables for X-Ray Crystallography[M]. Brirmingham: Kynoch Press, 1974. 79～150
