• Laser & Optoelectronics Progress
  • Vol. 56, Issue 11, 110001 (2019)
Fangyu Yue1、*, Feng Mao1, Han Wang1, Xiaoling Zhang1, Ye Chen1, Chengbin Jing1, and Junhao Chu1、2
Author Affiliations
  • 1 Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Optoelectronics, School of Information Science Technology, East China Normal University, Shanghai 200241, China
  • 2 National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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    DOI: 10.3788/LOP56.110001 Cite this Article Set citation alerts
    Fangyu Yue, Feng Mao, Han Wang, Xiaoling Zhang, Ye Chen, Chengbin Jing, Junhao Chu. Infrared Defect Emission and Thermal Effect in High Power Diode Lasers[J]. Laser & Optoelectronics Progress, 2019, 56(11): 110001 Copy Citation Text show less
    EL spectra from front facet of HPLD based on asymmetric InGaAs/AlGaAs single quantum well structure at different steady-state injection currents
    Fig. 1. EL spectra from front facet of HPLD based on asymmetric InGaAs/AlGaAs single quantum well structure at different steady-state injection currents
    EL signal from front facet at injection current of 600 mA
    Fig. 2. EL signal from front facet at injection current of 600 mA
    EL spectra from front and sidefacets of device at injection direct current of 600 mA
    Fig. 3. EL spectra from front and sidefacets of device at injection direct current of 600 mA
    EL II of device at steady-state injection current. (a) EL II from cavity front and side facets at 980 nm; (b) defect-related EL II at 1.3 μm
    Fig. 4. EL II of device at steady-state injection current. (a) EL II from cavity front and side facets at 980 nm; (b) defect-related EL II at 1.3 μm
    Thermal image dynamics corresponding to SWIR and MWIR signals of device before and after COD under pulsed injection current
    Fig. 5. Thermal image dynamics corresponding to SWIR and MWIR signals of device before and after COD under pulsed injection current
    EL spectra from front facet of 440 nm laser based on InGaN/GaN multiple quantum well structure under steady-state injection direct current
    Fig. 6. EL spectra from front facet of 440 nm laser based on InGaN/GaN multiple quantum well structure under steady-state injection direct current
    EL spectra and analysis results of 440 nm laser under different injection current intensities. (a) EL spectra from front facet; (b) EL II versus injection current intensity
    Fig. 7. EL spectra and analysis results of 440 nm laser under different injection current intensities. (a) EL spectra from front facet; (b) EL II versus injection current intensity
    EL spectra fromfront facet of 440 nm laser at different injection currents
    Fig. 8. EL spectra fromfront facet of 440 nm laser at different injection currents
    EL spectra from front facet of 440 nm laser under different injection currents
    Fig. 9. EL spectra from front facet of 440 nm laser under different injection currents
    Fangyu Yue, Feng Mao, Han Wang, Xiaoling Zhang, Ye Chen, Chengbin Jing, Junhao Chu. Infrared Defect Emission and Thermal Effect in High Power Diode Lasers[J]. Laser & Optoelectronics Progress, 2019, 56(11): 110001
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