| Silicon | Very low power consumption | CMOS-SOI-NEMS | Reduced power consumption
and highly adaptable
| [43]
|
| VOx+Au
| Enhanced absorption | Bolometer | At wavelengths λ =4.8 µm and λ =9 µm with
the absorption magnitudes more than 0.98
and 0.94; tunable dual-band absorption
peaks can be achieved.
| [44]
|
| VOx+Au
| Modulation wavelength | Bolometer | The peak wavelength can be tailored
from 2.4 to 10.2 µm.
| [45]
|
| α-Si +Au
| Enhanced absorption | Bolometer | NEP：100 pW/Hz1/2，D*>5×107 Jones
| [46]
|
| Si | Ultra-thin, highly-doped | Bolometer | Fast and highly-sensitive | [47]
|
| Polycrystalline films of Mn-Co-Ni-O | High TCR, low excess noise | Bolometer | At 30 Hz, noise equivalent temperature:
2.1 × 10−7 K/Hz1/2, responsivity: 330 V/W,
detectivity: 0.6 × 108 cm Hz1/2/W, noise
equivalent power: 3.7 × 10−10 W/Hz1/2 | [48]
|
| SixGeyO1−x−y | High TCR and a low corresponding
resistivity can be achieved using
various compositions.
| Bolometer | TCR: −3.95%/K, the TCR can be increased
and resistivity can be decreased by optimizing
the film contents at low oxygen concentration
| [49]
|
| Graphene | With a variety of reported photodetectors
ranging from visible to THz frequencies
| Bolometer | TCRs up to 900%/K, and the ability to
resolve temperature variations down to 15 µK.
| [50]
|
| Graphene | Can be synthesized inexpensively
via a non-toxic process
| Photodetector | Modulates the back-gate voltage to increase the
photoresponse by a factor of approximately
600 compared to that for a conventional
graphene photodetector.
| [51]
|
| HgTe CQD | Tunable optical response
and
the ease of fabrication
| CQD detectors | Have peakD * of 7.5 × 1010 Jones at
2.2 µm at room temperature.
| [52]
|
| SiNx | Has a bent cantilever due to the
micromachining techniques
| Optical
readout FPA
| The curvature radius of the multilayer cantilever
and the optical sensitivity of the system have
increased 5 times and 5.74 times.
| [53-54]
|
| InAsSb nanowire | On InP substrate | Nanowire
Photodetector
| The photodetectors comprised
nanostructured photoabsorbers, n-InAsSb/p-InP
(nanowire substrate) p-n heterojunctions, and 3-D
plasmonic gratings. Spanning the entire
MWIR regime from 3 to 5 μm
| [55]
|
| InAs nanowire | A rectification ratio greater than
300 at room temperature
| Heterojunctions photodetector | The dark current density is 130 mA/cm2 at
a temperature of 300 K and
a reverse bias of 0.5 V.
| [56]
|
| PbSe | Low cost, the major choice for
mid-IR sensing applications operating
in the 1-5 µm spectral range
| Photoconductive | D*: 4.2×1010 Jones
| [57]
|
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