• High Power Laser and Particle Beams
  • Vol. 34, Issue 12, 125001 (2022)
Youhui He1、2, Hongbin Chen2, Fei Li2, and Falun Song2、*
Author Affiliations
  • 1Graduate School of China Academy of Engineering Physics, Mianyang 621900, China
  • 2Institute of Applied Electronics, CAEP, Mianyang 621900, China
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    DOI: 10.11884/HPLPB202234.220213 Cite this Article
    Youhui He, Hongbin Chen, Fei Li, Falun Song. Effect of different nitrogen ion implantation parameters on surface charge accumulation and dissipation characteristics of polytetrafluoroethene[J]. High Power Laser and Particle Beams, 2022, 34(12): 125001 Copy Citation Text show less
    Full spectrum of XPS on PTFE surface under different treatment conditions
    Fig. 1. Full spectrum of XPS on PTFE surface under different treatment conditions
    [in Chinese]
    Fig. 1. [in Chinese]
    XPS C spectra of PTFE surface under different pulse voltage and nitrogen flow
    Fig. 2. XPS C spectra of PTFE surface under different pulse voltage and nitrogen flow
    XPS C spectra of PTFE surface treated with different RF source power and pulse voltage widths
    Fig. 3. XPS C spectra of PTFE surface treated with different RF source power and pulse voltage widths
    XPS N spectra of PTFE surface under different treatment conditions
    Fig. 4. XPS N spectra of PTFE surface under different treatment conditions
    Surface morphology of PTFE under different nitrogen flow treatments
    Fig. 5. Surface morphology of PTFE under different nitrogen flow treatments
    Effect of different treatment conditions on the surface resistivity of PTFE samples
    Fig. 6. Effect of different treatment conditions on the surface resistivity of PTFE samples
    Attenuation characteristics of central potential on PTFE surface under different treatment conditions
    Fig. 7. Attenuation characteristics of central potential on PTFE surface under different treatment conditions
    Distribution characteristics of traps on PTFE surface under different treatment conditions
    Fig. 8. Distribution characteristics of traps on PTFE surface under different treatment conditions
    No.voltage/kVpulse width/μspower/Wprocessed time/hnitrogen flow/(cm3·min−1)
    1~5350200110~40
    6~10550200110~40
    11~15750200110~40
    16~17325,75200120
    18~9525,75200120
    20725200120
    21~25550100110~30
    26~29550400110~40
    Table 1. Treatment conditions of experimental samples
    sample numberprocessing parametersproportion of C element/%
    CF3CF2CFC=OC−OCF3
    13 kV-50 μs, 10 cm3/min, 200 W, 1 h 0.0044.021.298.627.4437.45
    23 kV-50 μs, 20 cm3/min, 200 W, 1 h 1.3625.901.0511.6514.1742.38
    33 kV-50 μs, 40 cm3/min, 200 W, 1 h 5.3161.341.502.513.4823.41
    45 kV-50 μs, 10 cm3/min, 200 W, 1 h 0.8526.140.408.099.0053.73
    55 kV-50 μs, 20 cm3/min, 200 W, 1 h 0.3343.080.449.728.2737.78
    65 kV-50 μs, 40 cm3/min, 200 W, 1 h 1.3223.050.138.819.0662.07
    77 kV-50 μs, 40 cm3/min, 200 W, 1 h 2.1967.943.442.797.4621.13
    87 kV-50 μs, 20 cm3/min, 200 W, 1 h 1.6163.032.684.755.0121.69
    97 kV-50 μs, 10 cm3/min3, 100 W, 1 h 2.1757.365.347.606.5525.69
    103 kV-25 μs, 20 cm3/min, 100 W, 1 h 1.0341.131.8011.198.8137.74
    113 kV-50 μs, 20 cm3/min, 100 W, 1 h 2.1059.951.949.268.6216.33
    125 kV-50 μs, 10 cm3/min, 100 W, 1 h 1.0819.592.015.7610.7264.25
    135 kV-50 μs, 20 cm3/min3, 100 W, 1 h 020.680.149.875.8661.92
    145 kV-50 μs, 40 cm3/min3, 100 W, 1 h 0.0010.841.184.7810.1272.34
    155 kV-50 μs, 10 cm3/min3, 400 W, 1 h 3.3466.433.015.654.989.53
    165 kV-50 μs, 20 cm3/min3, 400 W, 1 h 3.6950.593.6710.8410.7017.97
    175 kV-50 μs, 40 cm3/min, 400 W, 1 h 4.9761.312.327.933.9319.92
    Table 2. Radicals and proportion of C elements in PTFE sample surface before and after ion implantation
    Youhui He, Hongbin Chen, Fei Li, Falun Song. Effect of different nitrogen ion implantation parameters on surface charge accumulation and dissipation characteristics of polytetrafluoroethene[J]. High Power Laser and Particle Beams, 2022, 34(12): 125001
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