• Infrared and Laser Engineering
  • Vol. 47, Issue 9, 920003 (2018)
Ge Zhangfeng1、*, Yu Chenhui1, Chen Ming1, Li Lin1, and Xu Jintong2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/irla201847.0920003 Cite this Article
    Ge Zhangfeng, Yu Chenhui, Chen Ming, Li Lin, Xu Jintong. Research on dark current of AlGaN solar-blind ultraviolet avalanche photodetectors[J]. Infrared and Laser Engineering, 2018, 47(9): 920003 Copy Citation Text show less
    References

    [1] Wang X Y, Zhong M, Zhao D G, et al. Back-illuminated 283 nm AlGaN solar-blind ultraviolet p-i-n photodetector[J]. Infrared & Laser Engineering, 2013, 42(4): 1011-1014. (in Chinese)

    [2] Cicek E, Mcclintock R, Vashaei Z, et al. Crack-free AlGaN for solar-blind focal plane arrays through reduced area epitaxy[J]. Applied Physics Letters, 2013, 102(5): 051102.

    [3] Liu F H, Xu J T, Wang L, et al. GaN-based avalanche photodiodes and its recent development [J]. Infrared & Laser Engineering, 2014, 43(4): 1215-1221. (in Chinese)

    [4] Yao C, Ye X, Sun R, et al. High-performance AlGaN-based solar-blind avalanche photodiodes with dual-periodic III-nitride distributed Bragg reflectors[J]. Applied Physics Express, 2017, 10(3): 034302.

    [5] Wu H, Wu W, Zhang H, et al. All AlGaN epitaxial structure solar-blind avalanche photodiodes with high efficiency and high gain[J]. Applied Physics Express, 2016, 9(5): 052103.

    [6] Pau J L, Bayram C, Mcclintock R, et al. Back-illuminated separate absorption and multiplication GaN avalanche photodiodes[J]. Applied Physics Letters, 2008, 92(10):101120.

    [7] Levinshtein M E, Rumyantsev S L, Shur M. Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe[M]. New York: John Wiley, 2008: 1-30.

    [8] Piprek J. Nitride Semiconductor Devices: Principles and Simulation[M]. Berlin: Wiley-VCH, 2007: 30-67.

    [9] Molnár M, Donoval D, Kuzmík J, et al. Simulation study of interface traps and bulk traps in n++ GaN/InAlN/AlN/GaN high electron mobility transistors[J]. Applied Surface Science, 2014, 312(5): 157-161.

    [10] Wang X D, Hu W D, Chen X S, et al. Dependence of dark current and photoresponse characteristics on polarization charge density for GaN-based avalanche photodiodes[J]. Journal of Physics D: Applied Physics, 2011, 44(40): 405102.

    [11] Yu C H, Ge Z F, Chen X Y, et al. Polarization and p-type doping effects on photoresponse of separate absorption and multiplication AlGaN solar-blind avalanche photodiodes[J]. Optical and Quantum Electronics, 2018, 50(2): 113.

    [12] Huang Y, Chen D J, Lu H, et al. Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes[J]. Applied Physics Letters, 2012, 101(25):253516.

    [13] Shao Z G, Chen D J, Lu H, et al. High-gain AlGaN solar-blind avalanche photodiodes[J]. IEEE Electron Device Letters, 2014, 35(3): 372-374.

    [14] Mcclintock R, Pau J L, Minder K, et al. Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes[J]. Applied Physics Letters, 2007, 90(14): 141112.

    Ge Zhangfeng, Yu Chenhui, Chen Ming, Li Lin, Xu Jintong. Research on dark current of AlGaN solar-blind ultraviolet avalanche photodetectors[J]. Infrared and Laser Engineering, 2018, 47(9): 920003
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