• Laser & Optoelectronics Progress
  • Vol. 56, Issue 22, 221401 (2019)
Yang Tang1, Maozhong Ge1、*, Taiming Wang2, and Jianyun Xiang3
Author Affiliations
  • 1School of Mechanical Engineering, Jiangsu University of Technology, Changzhou, Jiangsu 213001, China
  • 2China Airlines Changzhou Lanxiang Machinery Co., Ltd., Changzhou, Jiangsu 213022, China
  • 3School of Mechanical Engineering and Technology, Changzhou Institute of Industry Technology, Changzhou, Jiangsu 213164, China
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    DOI: 10.3788/LOP56.221401 Cite this Article Set citation alerts
    Yang Tang, Maozhong Ge, Taiming Wang, Jianyun Xiang. Effect of Laser Shock Peening on Fatigue Life of GH3039 Superalloy[J]. Laser & Optoelectronics Progress, 2019, 56(22): 221401 Copy Citation Text show less

    Abstract

    In this study, the GH3039 superalloy sheets were treated by using a Procudo200 laser shock peening (LSP) system to study the effect of LSP on the fatigue life of the GH3039 superalloy. Further, the microstructure and residual stress of the samples before and after LSP were characterized by using an optical microscopy and an X-350A residual stress tester, respectively. The fatigue life tests for the samples before and after LSP were performed by using an MTS Landmark 370.10 electro-hydraulic servo test system, and the fracture morphologies of the samples were characterized by using a ∑IGMA500 scanning electron microscope. The experimental results denote that the grain size of the surface layer of the superalloy is refined by LSP. The average residual stress induced by LSP becomes -255.07 MPa at the sample surface, and the surface roughness increases from 0.0346 μm to 0.048 μm. Furthermore, the fatigue life is observed to be improved by 2.41 times after LSP. Finally, the increase in fatigue life of the LSP-treated GH3039 superalloy can be mainly attributed to the residual compressive stress and grain refinement.
    Yang Tang, Maozhong Ge, Taiming Wang, Jianyun Xiang. Effect of Laser Shock Peening on Fatigue Life of GH3039 Superalloy[J]. Laser & Optoelectronics Progress, 2019, 56(22): 221401
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