• Opto-Electronic Engineering
  • Vol. 38, Issue 12, 99 (2011)
LIU Hui*, LI Zhu-ying, LIU Ye, and ZHANG Wang-zhou
Author Affiliations
  • [in Chinese]
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    DOI: 10.3969/j.issn.1003-501x.2011.12.019 Cite this Article
    LIU Hui, LI Zhu-ying, LIU Ye, ZHANG Wang-zhou. Effects of the Sputtering Power on the Optoelectronic Property of Ga-doped ZnO Thin Films[J]. Opto-Electronic Engineering, 2011, 38(12): 99 Copy Citation Text show less
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    [1] Chung J I, Chen J C, Tseng C J. Electrical and Optical Properties of TiO2-doped ZnO Films Prepare by Radio-frequency Magnetron Sputtering [J]. Journal of Physics and Chemistry of Solids(S0022-3697), 2008, 69: 535-539.

    [7] Cheong K Y, Muti N, Ramanan S R. ELectrical and optical studies of ZnO: Ga Thin films mearsured fabricated via the sol-gel technique [J]. Thin Solid Film(S0040-6090), 2002, 410(7): 142-146.

    [8] Abduev A K, Akhmeduv Y I, Asvarov A S, et al. Effect of growth temperature on properties of transparent conducting gallium-doped ZnO films [J]. Semiconductors(S1563-4795), 2010, 44(1): 32-36.

    [9] Ahnb D, Kim J H, Kang H S, et al. Thermally stable, highly conductive, and transparent Ga-doped ZnO thin films [J]. Thin Solid Film(S0040-6090), 2008, 516(7): 1382-1385.

    [10] Park Y J, Kim H N, Shin H H. Effect of deposition temperature on the crystallinity of Ga-doped ZnO thin films on glass substrates prepared by sputtering methed [J]. Appl Surf Sci(S0169-4332), 2009, 255(17): 7532-7536.

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    LIU Hui, LI Zhu-ying, LIU Ye, ZHANG Wang-zhou. Effects of the Sputtering Power on the Optoelectronic Property of Ga-doped ZnO Thin Films[J]. Opto-Electronic Engineering, 2011, 38(12): 99
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