Research progress on GaN Ohmic properties improvement by laser irradiation

Hongtao HU; Jingzhen SHAO; Xiaodong FANG

doi:10.3969/j.issn.1007-5461.2017.06.001

[1] Shaheen M E, Gagnon J E, et al. Excimer laser ablation of aluminum: Influence of spot size on ablation rate[J]. Laser Physics, 2016, 26(11): 116102.

[2] Wilson A, Jones I, Salamat-Zadeh F, et al. Laser surface modification of poly (etheretherketone) to enhance surface free energy, wettability and adhesion[J]. International Journal of Adhesion and Adhesives, 2015, 62: 60-77.

[3] Gillett A, Waugh D, Lawrence J, et al. Laser surface modification for the prevention of biofouling by infection causing Escherichia Coli[J]. Journal of Laser Applications, 2016, 28(2): 022503.

[4] Rotella G, Alfano M, Candamano S. Surface modification of Ti6Al4V alloy by pulsed Yb-laser irradiation for enhanced adhesive bonding[J]. CIRP Annals-Manufacturing Technology, 2015, 64(1): 527-530.

[5] Park J S, Han J, Seong T Y. Formation of low resistance Ti/Al-based Ohmic contacts on (11-22) semipolar n-type GaN[J]. Journal of Alloys and Compounds, 2015, 652: 167-171.

[6] Pang L, Kim K K. Improvement of ohmic contacts to n-type GaN using a Ti/Al multi-layered contact scheme[J]. PMaterials Science in Semiconductor Processing, 2015, 29: 90-94.

[7] Zhao S, McFavilen H, Wang S, et al. Temperature dependence and high-temperature stability of the annealed Ni/Au ohmic contact to p-type GaN in air[J]. Journal of Electronic Materials, 2016, 45(4): 2087-2091.

[8] Kim S K, Han J C, Seong T Y. Thermally stable Ti/Al-based ohmic contacts to n-polar n-GaN by using an indium interlayer[J]. Japanese Journal of Applied Physics, 2016, 55(3): 031001.

[9] Jang H W, Sands T, Lee J L. Effects of KrF excimer laser irradiation on metal contacts to n-type and p-type GaN[J]. Journal of Applied Physics, 2003, 94(5): 3529-3535.

[10] Huang H W, Kao C C, Chu J T, et al. Improvement of InGaN/GaN light emitting diode performance with a nano-roughened p-GaN surface by excimer laser-irradiation[J]. Materials Chemistry and Physics, 2006, 99(2): 414-417.

[12] Oh M S, Hwang D K, Lim J H, et al. Low resistance nonalloyed Ni/Au ohmic contacts to p-GaN irradiated by KrF excimer laser[J]. Applied Physics Letters, 2006, 89(4): 42107-42107.

[13] Wang G H, Wong T C, Wang X, et al. Reduced contact resistance and improved surface morphology of ohmic contacts on GaN employing KrF laser irradiation[J]. Japanese Journal of Applied Physics, 2011, 50(4S): 04DF06.

[14] Lin Y J, Liu W F, Lee C T. Excimer-laser-induced activation of Mg-doped GaN layers[J]. Applied Physics Letters, 2004, 84(14): 2515-2517.

[15] Basak D, Lachab M, Nakanishi T, et al. Effect of reactive ion etching on the yellow luminescence of GaN[J]. Applied Physics Letters, 1999, 75(23): 3710-3712.

[16] Van de Walle C G. Interactions of hydrogen with native defects in GaN[J]. Physical Review B, 1997, 56(16): R10020.

[17] Wright A F. Interaction of hydrogen with gallium vacancies in wurtzite GaN[J]. Journal of Applied Physics, 2001, 90(3): 1164-1169.

[18] Kim S J, Kim K H, Chung H Y, et al. Enhanced current transport and injection in thin-film gallium-nitride light-emitting diodes by laser-based doping[J]. ACS Applied Materials and Interfaces, 2014, (19): 16601-16609.

[19] Ueda T, Ishida M, Yuri M. Separation of thin GaN from sapphire by laser lift-off technique[J]. Japanese Journal of Applied Physics, 2011, 50(4R): 041001.

[20] Jakiela R, Barcz A, Dumiszewska E, et al. Si diffusion in epitaxial GaN[J]. Physica Status Solidi (c), 2006, 3(6): 1416-1419.

[21] Jang H W, Lee J-L, et al. Electrical properties of metal contacts on laser-irradiated n-type GaN[J]. Applied Physics Letters, 2003, 82(4): 580-582.

[22] Luther B P, DeLucca J M, Mohney S E, et al. Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to n-type GaN[J]. Applied Physics Letters, 1997, 71: 3859-3861.

[23] Kim S J, Jeong T, Kim T G. Improved thermal stability and reduced contact resistance of ohmic contacts on n-Face n-type GaN with laser-assisted doping[J]. IEEE Electron Device Letters, 2013, 34(3): 372-374.

[24] Look D C, Reynolds D C, Hemsky J W, et al. Defect donor and acceptor in GaN[J]. Physical Review Letters, 1997, 79(12): 2273.

[25] Jang H W, Lee J L. Origin of the abnormal behavior of contact resistance in ohmic contacts to laser-irradiated n-type GaN[J]. Applied Physics Letters, 2009, 98(18): 182108.

[26] Bogusawski P, Bernholc J. Doping properties of C, Si, and Ge impurities in GaN and AlN[J]. Physical Review B, 1997, 56(15): 9496.

[27] Xu X, Liu H, Shi C, et al. Residual donors and compensation in metal organic chemical vapor deposition as-grown n-GaN[J]. Journal of Applied Physics, 2001, 90(12): 6130-6134.

[28] Zheng B S, Ho C L, Cheng K Y, et al. Improved contact characteristics of laser-annealed p-GaN coated with Ni films[J]. Journal of Applied Physics, 2015, 118(8): 085706.