• Journal of Infrared and Millimeter Waves
  • Vol. 25, Issue 2, 90 (2006)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. STUDY ON QUANTUM AND SHORT-CHANNEL EFFECTS FOR SUB-50nm FINFETS HU Wei-Da CHEN Xiao-Shuang QUAN Zhi-Jue ZHOU Xu-Chang LU Wei[J]. Journal of Infrared and Millimeter Waves, 2006, 25(2): 90 Copy Citation Text show less
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    [2] Hisamoto D,Lee W C,Kedzierski J,et al.FinFET-a selfaligned double-gate MOSFET scalable to 20 nm [J].IEEE Trans.Elec.Dev.,2000,47(12):2320-2325.

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    [5] Choi Y K,King T J,Hu C.Nanoscale CMOS spacer Fin-FET for the terabit era [ J ].IEEE Trans.Elec.Dev.,2002,23(1):25-7.

    [6] Pei G,Kedzierski J,Oldiges P,et al.FinFET design considerations based on 3-D simulation and analytical modeling [J].IEEE Trans.Electron Devices,2002,49(8):1411-1419.

    [7] Kedzierski J,Meikei Ieong,Edward Nowak,et al.Extension and source/drain design for high-performance FinFET devices [ J ].IEEE Trans.Elec.Dev.,2003,50 (4):952-958.

    [8] Simon Li.Apsys User 's Manual [ M ].Canada:Crosslight Software Inc.Press,2004,153-155.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. STUDY ON QUANTUM AND SHORT-CHANNEL EFFECTS FOR SUB-50nm FINFETS HU Wei-Da CHEN Xiao-Shuang QUAN Zhi-Jue ZHOU Xu-Chang LU Wei[J]. Journal of Infrared and Millimeter Waves, 2006, 25(2): 90
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