Fig. 1. Flow-process diagram of HgCdTe photodiodes passivated by the CdTe in-suit

Fig. 2. Topography images of CdTe or HgCdTe using laser scanning confocal microscopy（a）CdTe deposited by MBE,（b）HgCdTe after etching CdTe in-suit, and（c）HgCdTe after etching top layer HgCdTe

Fig. 3. AFM topography images of CdTe or HgCdTe（a）CdTe deposited by MBE,（b）HgCdTe after etching CdTe in-suit, and（c）CdTe deposited by E-beam evaporation

Fig. 4. SEM top view images of CdTe or HgCdTe surface

Fig. 5. Cross-sectional SEM images of the CdTe and HgCdTe interface（a）cross-sectional images of CdTe deposited by MBE, and（b）cross-sectional images of CdTe deposited by E-beam evaporation

Fig. 6. I-V and R-V characteristics of HgCdTe photodiodes with different passivation layers（a）photodiodes passivated by CdTe in-suit,（b）photodiodes passivated by CdTe/ZnS,（c）photodiodes passivated by CdTe in-suit with annealing after implant, and（d）photodiodes passivated by CdTe/ZnS with annealing after implant