Optical properties and applications for MoS2-Sb2Te3-MoS2 heterostructure materials

Wenjun Liu; Ya-Nan Zhu; Mengli Liu; Bo Wen; Shaobo Fang; Hao Teng; Ming Lei; Li-Min Liu; Zhiyi Wei

doi:10.1364/PRJ.6.000220

Journals >Photonics Research >Volume 6 >Issue 3 >Page 220 > Article

Photonics Research
Vol. 6, Issue 3, 220 (2018)

Optical properties and applications for MoS₂-Sb₂Te₃-MoS₂ heterostructure materials

Wenjun Liu^1、2、†, Ya-Nan Zhu^3、†, Mengli Liu¹, Bo Wen³, Shaobo Fang², Hao Teng², Ming Lei^1、5, Li-Min Liu^3、4、6, and Zhiyi Wei^2、*

Author Affiliations

¹State Key Laboratory of Information Photonics and Optical Communications, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China

²Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

³Beijing Computational Science Research Center, Beijing 100193, China

⁴School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100083, China

⁵e-mail: mlei@bupt.edu.cn

⁶e-mail: limin.liu@csrc.ac.cn

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DOI: 10.1364/PRJ.6.000220 Cite this Article Set citation alerts

Wenjun Liu, Ya-Nan Zhu, Mengli Liu, Bo Wen, Shaobo Fang, Hao Teng, Ming Lei, Li-Min Liu, Zhiyi Wei. Optical properties and applications for MoS₂-Sb₂Te₃-MoS₂ heterostructure materials[J]. Photonics Research, 2018, 6(3): 220 Copy Citation Text

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State-of-the-art SA devices using the MoS2-Sb2Te3-MoS2 heterostructure. (a) Schematic of macrostructure and (b) surface structure of the fabricated MoS2-Sb2Te3-MoS2 heterostructure SA. Sb2Te3 (7 nm thickness) is in the middle of MoS2 (8 nm thickness). The gold film with 117 nm thickness is deposited on the polished fused silica substrate as a broadband reflection mirror. (c) SEM image of the surface of deposited MoS2-Sb2Te3-MoS2 heterostructure film. (d) SEM image of the film thickness.

Fig. 1. State-of-the-art SA devices using the MoS2-Sb2Te3-MoS2 heterostructure. (a) Schematic of macrostructure and (b) surface structure of the fabricated MoS2-Sb2Te3-MoS2 heterostructure SA. Sb2Te3 (7 nm thickness) is in the middle of MoS2 (8 nm thickness). The gold film with 117 nm thickness is deposited on the polished fused silica substrate as a broadband reflection mirror. (c) SEM image of the surface of deposited MoS2-Sb2Te3-MoS2 heterostructure film. (d) SEM image of the film thickness.

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Atomic and electronic structures of the MoS2-Sb2Te3-MoS2 heterostructure. (a) Side and (b) top views of the MoS2-Sb2Te3-MoS2 heterostructure. In (b), the detailed matching pattern of the (7×7)/(2×2)MoS2-Sb2Te3-MoS2 heterostructure is shown. The (7×7)MoS2 supercell is highlighted with yellow color, and the (2×2)Sb2Te supercell is denoted by the blue area. (c) Unfolding band structure of the MoS2-Sb2Te3-MoS2 heterostructure. Here, the Fermi level is defined as zero. (d) Band alignment of the MoS2-Sb2Te3-MoS2 heterostructure. The corresponding energy levels of pure MoS2 and Sb2Te3 slabs are shown in both sides.

Fig. 2. Atomic and electronic structures of the MoS2-Sb2Te3-MoS2 heterostructure. (a) Side and (b) top views of the MoS2-Sb2Te3-MoS2 heterostructure. In (b), the detailed matching pattern of the (7×7)/(2×2)MoS2-Sb2Te3-MoS2 heterostructure is shown. The (7×7)MoS2 supercell is highlighted with yellow color, and the (2×2)Sb2Te supercell is denoted by the blue area. (c) Unfolding band structure of the MoS2-Sb2Te3-MoS2 heterostructure. Here, the Fermi level is defined as zero. (d) Band alignment of the MoS2-Sb2Te3-MoS2 heterostructure. The corresponding energy levels of pure MoS2 and Sb2Te3 slabs are shown in both sides.

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Fig. 3. Standard two-arm transmission setup. The SAM is the MoS2-Sb2Te3-MoS2 heterostructure SA mirror.

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Fig. 4. Characterization of the MoS2-Sb2Te3-MoS2 heterostructure SA mirror. (a) The modulation depth is 64.17%. (b) Raman spectrum of the MoS2-Sb2Te3-MoS2 heterostructure. (c), (d) Threshold damage condition of the MoS2-Sb2Te3-MoS2 heterostructure film at 12 mW.

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Fig. 5. Configuration of the mode-locked EDF laser. WDM, wavelength-division multiplexer; LD, laser diode; SMF, single-mode fiber; EDF, erbium-doped fiber; OC, optical coupler; PC, polarization controller; PI-ISO, polarization-independent isolator; SAM, MoS2-Sb2Te3-MoS2 heterostructure SA mirror.

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Fig. 6. Typical Q-switching characteristics. (a) Q-switched pulse trains. (b) Optical spectrum. (c) Q-switched pulse duration at 600 mW pump power. (d) RF spectrum at the fundamental frequency and wideband RF spectrum (inset).

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Fig. 7. (a) Pulse duration and repetition rate versus incident pump power. (b) Average output power and single pulse energy versus incident pump power.

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Fig. 8. Experimental results of fiber laser with mode-locked states. (a) Optical spectrum. (b) Pulse duration. (c) RF spectrum. (d) Phase noise.

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		Effective Mass ( $m_{0}$ )		Carrier Mobility ( ${cm}^{2} \cdot V^{- 1} \cdot s^{- 1}$ )
Units	Carrier Type	$m_{x}^{*}$	$m_{y}^{*}$	$μ_{x}$	$μ_{y}$
${MoS}_{2}$	e	0.774	0.478	23.87	94.04
${MoS}_{2}$	h	3.195	0.550	8.54	51.76
${Sb}_{2} {Te}_{3}$	e	0.291	0.157	$0.75 \times 10^{4}$	$1.91 \times 10^{4}$
${Sb}_{2} {Te}_{3}$	h	0.284	0.076	$0.69 \times 10^{4}$	$2.12 \times 10^{4}$
${MoS}_{2} - {Sb}_{2} {Te}_{3} - {MoS}_{2}$	e	0.405	0.315	1560.97	8474.63
${MoS}_{2} - {Sb}_{2} {Te}_{3} - {MoS}_{2}$	h	0.423	0.620	798.87	1447.54
Graphene- ${Sb}_{2} {Te}_{3}$ -graphene	e	7.762	9.860	13.50	5.96
Graphene- ${Sb}_{2} {Te}_{3}$ -graphene	h	1.553	1.656	149.23	357.62

Table 1. Effective Mass (

m_{0}

) and Carrier Mobility (

μ

) of Monolayer and Heterostructure Materials^a

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		Carrier Concentration ( $m^{- 2}$ )
Units	Bandgap (eV)	$n_{i x}$	$n_{i y}$
${MoS}_{2}$	1.79	131	43.8
${Sb}_{2} {Te}_{3}$	0.46	$3.11 \times 10^{12}$	$1.58 \times 10^{12}$
${MoS}_{2} - {Sb}_{2} {Te}_{3} - {MoS}_{2}$	0.35	$5.13 \times 10^{13}$	$1.03 \times 10^{14}$
Graphene- ${Sb}_{2} {Te}_{3}$ -graphene	0.07	$7.26 \times 10^{16}$	$1.13 \times 10^{17}$

Table 2. Intrinsic Carrier Concentration of Monolayer and Heterostructure Materials^a

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Materials	Pulse duration (fs)	SNR (dB)	Modulation depth (%)	Power (mW)	References
Graphene- ${Bi}_{2} {Te}_{3}$ heterostructure	1800	67.4	18.98	–	[55]
Graphene- ${Bi}_{2} {Te}_{3}$ heterostructure	837	60.7	12.6	3.07	[58]
Graphene- ${Bi}_{2} {Te}_{3}$	189940	$< 50$	23.28	2.53	[59]
${MoS}_{2} / graphene$ nanocomposites	3670	53.7	38.3	$< 2.16$	[60]
$Graphene / {MoS}_{2}$	830	60	10.8	5.85	[61]
$Graphene / {WS}_{2}$	1120	62	9.6	4.74	[62]
${MoS}_{2} - {Sb}_{2} {Te}_{3} - {MoS}_{2}$	286	73	64.17	20	This work