Perovskite-transition metal dichalcogenides heterostructures: recent advances and future perspectives

Ahmed Elbanna; Ksenia Chaykun; Yulia Lekina; Yuanda Liu; Benny Febriansyah; Shuzhou Li; Jisheng Pan; Ze Xiang Shen; Jinghua Teng

doi:10.29026/oes.2022.220006

Journals >Opto-Electronic Science >Volume 1 >Issue 8 >Page 220006 > Article

Opto-Electronic Science
Vol. 1, Issue 8, 220006 (2022)

Perovskite-transition metal dichalcogenides heterostructures: recent advances and future perspectives

Ahmed Elbanna^1、2、†, Ksenia Chaykun^3、†, Yulia Lekina^2、4, Yuanda Liu¹, Benny Febriansyah⁶, Shuzhou Li⁵, Jisheng Pan¹, Ze Xiang Shen^{2、3、4、*}, and Jinghua Teng^1、*

Author Affiliations

¹Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore

²Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore

³Interdisciplinary Graduate Program, Energy Research Institute@NTU, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

⁴The Photonics Institute and Center for Disruptive Photonic Technologies, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 Singapore

⁵School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

⁶Berkeley Educational Alliance for Research in Singapore (BEARS), Ltd., 1 CREATE Way, Singapore 138602, Singapore

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DOI: 10.29026/oes.2022.220006 Cite this Article

Ahmed Elbanna, Ksenia Chaykun, Yulia Lekina, Yuanda Liu, Benny Febriansyah, Shuzhou Li, Jisheng Pan, Ze Xiang Shen, Jinghua Teng. Perovskite-transition metal dichalcogenides heterostructures: recent advances and future perspectives[J]. Opto-Electronic Science, 2022, 1(8): 220006 Copy Citation Text

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References

[114] Excitation that lasts. Nat Nanotechnol13, 973 (2018).

[140] Jiang CY, Rasmita A, Ma H, Tan QH, Huang ZM et al. Room-temperature bipolar valleytronic transistor in MoS2/WSe2 heterostructures. arXiv:2102.03756.

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