An experimental system for measuring carrier mobility based on Photo-CELIV is built. With a pulsed Nd3+YAG laser as an induction light source and under the operating frequency ranging from 1 Hz to 20 Hz, the whole system has an output laser with a wavelength of 532 nm, a pulse width of 10 ns, the tunable energy ranging from 0.1 mJ to 1 mJ, and a spot diameter being less than 2 mm. The laser energy instability after continuous work over 5 h is ±8%. The study here provides certain reference for the measurement of carrier mobility in semiconductor materials.