[1] Levine B F, Malik R J, Walker J, et al. Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguides ［J］.Applied Physics Letters, 1987, 50 (5) :273-275 .
[2] Lu W, Li L, Zheng H L, et al. Development of an infrared detector: Quantum well infrared photodetector［J］.Science in China Series G: Physics, Mechanics & Astronomy, 2009, 52 (7): 969-977 .
[3] Rogalski A. Quantum well photoconductors in infrared detector technology［J］. Journal of Applied Physics, 2003, 93 (8): 4355-4391.
[4] Rogalski A. Material considerations for third generation infrared photon detectors［J］. Infrared Physics & Technology, 2007, 50 (2-3): 240-252.
[5] Harrison P. Quantum wells, wires, and dots: Theoretical and computational physics of semiconductor nanostructure［M］. Second ed. John Wiley & Sons Hoboken, NJ, 2005.
[6] Jin J P, Lin C. Design of optimized Quantum well infrared photodetector's structure including higher order effects［J］. Proc. of SPIE, 2010, 7658: 76581U1-76581U6.
[7] Panda S, Panda B K, Fung S. Effect of conduction band nonparabolicity on the dark current in a quantum well infrared detector［J］. J. Appl. Phys. 2007, 101(4): 043705.
[8] Hirayama Y, Smet J H, Peng L H, et al. Feasibility of 155 μm intersubband photonic devices using InGaAs/AlAs pseudomorphic quantum well structures［J］. Japanese J. Applied Phys., 1994, 33: 890-895.
[9] Liu H C. Quantum well infrared photodetectors: The basic design and new research directions［J］. Chinese Journal Of Semiconductor, 2001, 22 (5): 529-537.
[10] Schneider H, Liu H C. Quantum well infrared photodetectors: Physics and applications［M］. 1 ed. Springer, New York, 2007.
[11] Vurgaftman I, Meyer J R, Ram-Mohan L R. Band parameters for III-V compound semiconductors and their alloys［J］. J. Appl. Phys., 2001, 89 (11): 5815-5875.
