Research Progress on Ultrashort Vortex Pulse Generation Methods

Yuting Gong; Lanqin Liu; Yuanchao Geng; Xibo Sun

doi:10.3788/LOP57.050008

Journals >Laser & Optoelectronics Progress >Volume 57 >Issue 5 >Page 050008 > Article

Laser & Optoelectronics Progress
Vol. 57, Issue 5, 050008 (2020)

Research Progress on Ultrashort Vortex Pulse Generation Methods

Yuting Gong^1、2, Lanqin Liu^1、*, Yuanchao Geng¹, and Xibo Sun¹

Author Affiliations

¹Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China

²Graduate School of China Academy of Engineering Physics, Beijing 100088, China

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DOI: 10.3788/LOP57.050008 Cite this Article Set citation alerts

Yuting Gong, Lanqin Liu, Yuanchao Geng, Xibo Sun. Research Progress on Ultrashort Vortex Pulse Generation Methods[J]. Laser & Optoelectronics Progress, 2020, 57(5): 050008 Copy Citation Text

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Fig. 1. Diagram of SPP with 16 steps^[33]

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$36-level achromatic spiral phase plate composed of two elements with different refractive indexes[35]$

Fig. 2. 36-level achromatic spiral phase plate composed of two elements with different refractive indexes^[35]

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Fig. 3. Schematic of 2f-2f dispersion compensation setup^[37]

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Fig. 4. Schematic of ultrabroadband vortex beam generation system^[41]

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Fig. 5. Diagram of axially-symmetric half-wave plate^[43]

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Fig. 6. Setup diagram for generation of double-charge femtosecond vortex pulses^[44]

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Fig. 7. Setup diagram for generation and characterization of few-cycle ultrashort vortex pulses^[45]

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Fig. 8. Schematic of ultrashort vortex pulse generation by spiral multi-pinhole plate^[46]

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Fig. 9. Diagram of Sagnac interferometer used as single-charge vortex generator^[47]

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Component	Polarizer	AQWP1	ASP	AQWP2	Analyzer
Jones matrix	$\begin{matrix} [\begin{matrix} 1 & 0 \\ 0 & 0 \end{matrix}] \end{matrix}$	$\begin{matrix} \frac{1}{\sqrt[]{2}} \end{matrix} \begin{matrix} [\begin{matrix} 1 & i \\ i & 1 \end{matrix}] \end{matrix}$	$\begin{matrix} [\begin{matrix} co s^{2} φ & \frac{1}{2} \sin 2 φ \\ \frac{1}{2} \sin 2 φ & si n^{2} φ \end{matrix}] \end{matrix}$	$\begin{matrix} \frac{1}{\sqrt[]{2}} \end{matrix} \begin{matrix} [\begin{matrix} 1 & - i \\ - i & 1 \end{matrix}] \end{matrix}$	$\begin{matrix} [\begin{matrix} 0 & 0 \\ 0 & 1 \end{matrix}] \end{matrix}$
Vector	$\begin{matrix} [\begin{matrix} 1 \\ 0 \end{matrix}] \end{matrix}$	$\begin{matrix} \frac{1}{\sqrt[]{2}} \end{matrix} \begin{matrix} [\begin{matrix} 1 \\ i \end{matrix}] \end{matrix}$	$\begin{matrix} \frac{1}{\sqrt[]{2}} \end{matrix}$ exp(iφ) $\begin{matrix} [\begin{matrix} cosφ \\ sinφ \end{matrix}] \end{matrix}$	$\begin{matrix} \frac{1}{2} \end{matrix} \begin{matrix} [\begin{matrix} 1 \\ - iexp (2 iφ) \end{matrix}] \end{matrix}$	- $\begin{matrix} \frac{i}{2} \end{matrix}$ exp(2iφ) $\begin{matrix} [\begin{matrix} 0 \\ 1 \end{matrix}] \end{matrix}$

Table 1. Jones matrix of each component and light field vectors after passing through device^[41]

Generation method	Advantage	Disadvantage
Spiral phase plate	High damage threshold,low dissipation, greater flexibility	Topological-charge dispersion,group delay
Computer-generatedhologram	Generate anytopological charge	Low conversion efficiency,complicated compensation procedure
Axially symmetric polarizer/axiallysymmetric half-wave plate	High conversation efficiency,applicable to ultrabroadband pulses	Low damage threshold
Uniaxial crystal	Applicable to ultrabroadband pulses,high damage threshold, highconversation efficiency	Only generate single-anddouble-charge vortex
Spiral grating	Compact structure,generate high contrast pulse	Complicate components
Spiral multi-pinhole plate	High damage threshold,easily fabricated	Topological-charge dispersion,low conversion efficiency
Sagnac interferometer	Common-path configuration,applicable to ultrabroadband pulses,high damage threshold	Only generate single-charge vortex

Table 2. Comparison of different methods for ultrashort vortex beam generation

Yuting Gong, Lanqin Liu, Yuanchao Geng, Xibo Sun. Research Progress on Ultrashort Vortex Pulse Generation Methods[J]. Laser & Optoelectronics Progress, 2020, 57(5): 050008

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