High-frequency InAlN/GaN HFET with an fT of 350 GHz

FU Xing-Chang; LV Yuan-Jie; ZHANG Li-Jiang; ZHANG Tong; LI Xian-Jie; SONG Xu-Bo; ZHANG Zhi-Rong; FANG Yu-Long; FENG Zhi-Hong

doi:10.11972/j.issn.1001-9014.2018.01.004

[1] Brown A, Brown K, Chen J, et al. W-band GaN power amplifier MMICs［C］. IEEE MTT-S International, 2011, Baltimore, MD: 1-4.

[2] Chung J W, Hoke W E, Chumbes E M, et al. Advanced gate technologies for state-of-the-art fT in AlGaN/GaN HEMTs［C］. IEDM Tech. Dig, 2010, 30, 1-4.

[3] Chung J W, Hoke W E, Chumbes E M, et al. AlGaNGaN HEMT with 300 GHz fmax［J］. IEEE Electron Device Letters, 2010, 31(3): 195-197.

[4] Kuzmík J. Power electronics on InAlN/(In)GaN: Prospect for a record performance［J］. IEEE Electron Device Letters, 2001, 22: 510-512.

[5] Shinohara K, Regan D C, Tang Y, et al. Scaling of GaN HEMTs and Schottky diodes for submillimeter-wave MMIC applications［J］. IEEE Transaction on Electron Devices, 2013, 60(10): 2982-2996.

[6] Wang Y G, Lv Y J, Song X B, et al. Reliability assessment of InAlN/GaN HFETs with lifetime 8.9 106 hours ［J］. IEEE Electron Device Letters, 2017, 38(5): 604-606.

[7] Sun H, Alt A R, Benedickter H, Feltin E, Carlin J F, et al. 205 GHz (Al,In)N/GaN HEMTs ［J］. IEEE Electron Device Letters, 2010, 31(9):957-959.

[8] Lee D S, Chung J W, Wang H, et al. 245 GHz InAlN/GaN HEMTs with oxygen plasma treatment ［J］. IEEE Electron Device Letters, 2011, 32(6): 755-757.

[9] Lee D S, Gao X, Guo S, et al. 300 GHz InAlN/GaN HEMTs with InGaN back barrier ［J］. IEEE Electron Device Letters, 2011, 32(11):1525-1527.

[10] Yue Y Z, Hu Z Y, Guo J, et al. Ultrascaled InAlN/GaN High Electron Mobility Transistors with Cutoff Frequency of 400 GHz ［J］. Japanese Journal of Applied Physics, 2013, 52(8): 279-287.

[11] Lv Y J, Feng Z H, Zhang Z R, et al. 60 nm T-shaped-gate InAlN/GaN HFETs with fT&fmax of 170&210 GHz ［J］. Journal of Infrared Millim. Waves, 2016, 35(6): 641-645.

[12] Yin J Y, Lv Y J, Song X B, et al. fT=220 GHz InAlN/GaN HFETs with regrown ohmic contacts ［J］. Journal of Infrared Millim. Waves, 2017, 36(1): 6-9.

[13] Guo J, Li G W, Faria F, et al. MBE-Regrown Ohmics in InAlN HEMTs With a Regrowth Interface Resistance of 0.05 Ω·mm ［J］. IEEE Electron Device Letters, 2012, 33(4): 525-527.

[14] Schuette M L, Ketterson A, Song B, et al. Gate-Recessed Integrated E/D GaN HEMT Technology With fT/fmax>300 GHz ［J］. IEEE Electron Device Letters, 2013, 34(6): 741-743.

[15] Brown D F, A Williams, Shinohara K, et al. W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE［C］. IEEE Electron Devices Meeting (IEDM), 2011, Washington, DC: 461-464.

[16] Wu Y F, Kapolnek D, Kozodoy P, et al. AlGaN/GaN MODFETs with low ohmic contact resistances by source/drain n+ re-growth ［C］. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, San Diego, CA: 431-434.

[17] Guo H Y, Lv Y J, Gu G D, et al. High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition ［J］. Chinese Physics Letters, 2015, 32(11): 118501-1-118501-3.

[18] Huang T D, Zhu X L, Lau K M, Enhancement-Mode AlN/GaN MOSHFETs on Si Substrate With Regrown Source/Drain by MOCVD ［J］. IEEE Electron Device Letters, 2012, 33(8):1123-1125.

[19] Chen G, Kumar V, Schwindt R S, et al. Low Gate Bias Model Extraction Technique for AlGaN/GaN HEMTs ［J］. IEEE Trans Micro Theory Tech, 2006, 54:2949-2953.