Fig. 1. Crystal structure of β-Ga2
Fig. 2. Morphology of
β-Ga
2O
3 nanowires and photoelectric response of device
[152]. (a) SEM image of the
β-Ga
2O
3 nanowires grown on the Au-coated silicon substrate; (b)
I-V curves of the detector under 254 nm light illumination and dark condition (inset); (c) time response of the device to light at 254 nm; (d) enlargement of the rising and falling edges for the light “on” and “off” for the first time
Fig. 3. Structural characteristics of Ga
2O
3 and performance of the device
[135]. (a) X-ray diffraction (XRD) pattern of the
α-Ga
2O
3 grown on the sapphire substrate. The inset shows the schematic of the device structure; (b) spectral responsivity of the photodetectors at 5 V bias; (c)
I-V characteristics of the devices in the dark (black line) and under illumination
Fig. 4. Structure and electrical characteristics of the device based on
β-Ga
2O
3 flake
[72]. (a) Schematic of the preparation process of the
β-Ga
2O
3 flake based solar-blind photodetector; (b) optical microscopy image of the device; (c) typical electrical properties of the
β-Ga
2O
3 flake based FETs; (d) time-dependent photoresponse of the photodetector under illumination at different wavelengths; (e) responsivity as a function of wavelength
Fig. 5. Ga
2O
3 photodetector and its performance test. (a) Fabrication process of photodetector
[142]; (b) current-voltage (
I-V) characteristics of photodetector. Filled and hollow dots represent current in the dark condition and 250 nm-light irradiationv, respectively
[142]; (c) responsivity and photocurrent response of the photodetector at reverse bias of 10 V
[142]; (d) photograph of the flame detector
[162]; (e) transient response of the detector
[162]; (f) signal from the flame detection system
[162] Fig. 6. Performance of the Ga
2O
3 Schottky photodiode
[18]. (a) Dark
I-V characteristics of the Au-Ga
2O
3 Schottky photodiode annealed at various temperatures; (b) spectral response of the device before and after annealing
Fig. 7. Crystal wafer of Ga
2O
3 and time response of the device
[163]. (a)(b) Epitaxial wafer and AFM image of the Ga
2O
3; (c) time response of the photodetector with the
β-Ga
2O
3 MSM structure
Fig. 8. Configuration and its photoresponse of the narrow-band detector based on
β-Ga
2O
3 single crystal
[166]. (a) AFM image of the (100)
β-Ga
2O
3 single crystal; (b) configuration of the narrow-band detector combined with an orthogonally aligned filter; (c) photoresponsivity as a function of chopper modulation frequency; (d) fitting of waveform curves of transient photoresponse measured at 150 Hz
Fig. 9. Schematic diagram and measured I-V characteristic curves of the fabricated β-Ga2O3 photodetector. (a) Schematic diagram of the fabricated β-Ga2O3 photodetector; (b) measured I-V characteristic curves
Fig. 10. Structural schematic of the device and its spectral response
[168]. (a) Structural schematic of
β-Ga
2O
3 single-crystal photodiode; (b) spectral response of Ga
2O
3 photodiodes with and without a cap layer at reverse and forward biases of 3 V
Fig. 11. PL spectra of Ga
2O
3 films. (a) NIR PL spectra of Er∶Ga
2O
3 films with different concentrations
[171]; (b) PL spectra of Ce∶Ga
2O
3 films with different doping concentrations
[174] Fig. 12. Electrical characteristics and spectral response of Ga
2O
3 solar-blind photodetectors. (a)
I-V characteristics of the annealed
β-Ga
2O
3 thin film at 800 ℃
[184]; (b)
I-V curves of the MSM
ε-Ga
2O
3 photodetector in the dark at variable temperatures
[136]; (c)
R and
D* as functions of the wavelength of the MSM
ε-Ga
2O
3 photodetector at a bias of 6 V
[136]; (d) magnified fall edge of the
I-t characteristic curves
[136] Fig. 13. I-V characteristics and spectral response of the device. (a) Current-voltage characteristics for various UV-light illumination intensities
[208]; (b) schematic diagram of the APD
[150]; (c)
I-V characteristics of the device
[150]; (d) spectral response of the device at -6 V bias
[150] Fig. 14. Principle of photoresponse and spectral response of the device. (a) Normalized transient photoresponse characteristics at room temperature
[212]; (b) photoconductive gain and avalanche multiplication gain for the device as functions of applied bias
[212]; (c) energy band diagram at high reverse bias under 254 nm illumination
[212]; (d) HRTEM images acquired from sample
[214]; (e) pulse photocurrent as a function of the time of the Ga
2O
3 thin-film photodetectors
[214]; (f) spectral responsivity of the device at bias of 5 V
[214] Fig. 15. Fabrication process and photoelectric properties of
β-Ga
2O
3 nanowires photodiode
[145]. (a) Schematic illustration of the fabrication of
β-Ga
2O
3 nanowires array film and its vertical Schottky photodiode; (b)
I-V characteristics of device in dark and under the illumination at 254 nm; (c) spectral response of the device
Fig. 16. Imaging and photoresponse of
β-Ga
2O
3 photodetectors. (a) Spectral response of the diamond/
β-Ga
2O
3 photodetector at 0 V bias
[148]; (b) image of the object with letters “UV” on a black paper and the image obtained from the imaging system
[148]; (c)
I-V curves of the MoS
2/
β-Ga
2O
3 heterojunction device
[151]; (d) time-dependent photoresponse of the device
[151]; (e) typical PEC system built for evaluating the photoresponse behaviors of the
α-Ga
2O
3 NA/Cu
2O photodetector
[227]; (f) transient response current for the photodetector at zero bias
[227] Fig. 17. Spectral response and impulse response of
β-Ga
2O
3 photodetector. (a) Photocurrent and power density as functions of excitation wavelength
[230]; (b) spectral response of reference
β-Ga
2O
3 photodetector at 1V bias and
β-Ga
2O
3/PANI at zero bias
[230]; (c) spectral responsivity and corresponding absorption spectrum of the photodetector
[233]; (d) time response of the photodetector for the 248nm pulse laser without bias
[233] Polymorph | Lattice constant /(10-10 m) | Bandgap /eV | Structure | Space group | Optical dielectricconstant |
---|
α | a,b=4.98--5.04,c=13.4--13.60 | 5.3 | Rhombohedral | Rc | 3.03--3.80 | β | a=12.12--12.34,b=3.03--3.04,c=5.80--5.87 | 4.2--4.9 | Monoclinic | C2/m | 2.82--3.57 | γ | a=8.24--8.30 | 5.0 | Cubic | Fdm | - | δ | a=9.40--10.0 | | Cubic | Ia | - | ε | a=5.06--5.12,b=8.69--8.79,c=9.30--9.40 | 4.9 | Hexagonal | P63mc | - |
|
Table 1. Summary of basic parameters of Ga
2O
3 polycrystalline
[15,42] Parameter | Si | GaAs | GaN | 4H-SiC | MgZnO | Diamond | β-Ga2O3 |
---|
Bandgap Eg/eV | 1.10 | 1.43 | 3.40 | 3.25 | 3.70--7.80 | 5.50 | 4.20--4.90 | Relative dielectric constant ε | 11.8 | 12.9 | 9.0 | 9.7 | 4.6 | 5.50 | 10.0 | Breakdown field /(MV·cm-1) | 0.3 | 0.4 | 3.3 | 2.5 | - | 10.0 | 8.0 | Electron mobility /(cm2·V-1·s-1) | 1480 | 8400 | 1250 | 1000 | 250 | 2000 | 300 | Thermal conductivity /(W·cm-1 ·K) | 1.5 | 0.5 | 2.3 | 4.9 | 1.2 | 20.0 | 0.1--0.3 | Saturation velocity (107 cm·s-1) | 1 | 1.2 | 2.5 | 2 | - | 1 | 1.8--2 | Baliga (ε·μ·) | 1 | 14.7 | 846 | 317 | - | 24660 | 3444 | Keyes[λ/(4πε)]1/2 | 1 | 0.3 | 1.8 | 3.6 | - | 41.5 | 0.2 |
|
Table 2. Properties of
β-Ga
2O
3 and other more commonly used semiconductors
[55] Growth Method | Material | Id/nA | R /(A·W-1) | EQE /% | tr /s | td /s | Ref. No | Year |
---|
MBE | β-Ga2O3 film | 128 | - | - | 0.86 | 1.02 | [94] | 2014 | β-Ga2O3 film | 45 | - | - | 0.62 | 0.83 | [183] | 2014 | β-Ga2O3 film | 0.04 | 259 | >104 | 0.4 | 0.1 | [96] | 2015 | Mn∶β-Ga2O3 film | 842.1 | 0.07 | 36 | 0.91 | 0.28 | [191] | 2016 | β-Ga2O3 film | 70 | 153 | - | 5 | 10.3 | [192] | 2017 | β-Ga2O3 film | 10 | 1.5 | - | 3.3 | 0.4 | [5] | 2017 | β-Ga2O3 film | 0.026 | 54.9 | - | 2 | 4 | [193] | 2017 | β-Ga2O3 film | 7.3 | 10-5 | 0.5 | - | - | [194] | 2018 | β-Ga2O3 film | - | 8.41 | - | 2.97 | 0.41 | [195] | 2019 | Growth Method | Material | Id/nA | R /(A·W-1) | EQE /% | tr /s | td /s | Ref. No | Year | RFMS | β-Ga2O3 film | 40 | 43.31 | >104 | 1.08 | 0.65 | [121] | 2017 | Ga2O3 film | 0.34 | 70.26 | - | 0.41 | 0.02 | [178] | 2017 | Mg∶β-Ga2O3 film | ~10-3 | 0.024 | - | 0.33 | 0.02 | [60] | 2017 | Ga2O3 film | - | 0.19 | - | <10-5 | <10-5 | [139] | 2017 | β-Ga2O3 film | 10-3 | 0.893 | 444 | 0.31 | 0.25 | [137] | 2018 | β-Ga2O3 film | 7.63 | 2.602 | 1265 | 0.26 | 1.00 | [124] | 2018 | Ga2O3 film | ~10-3 | 436.3 | - | ~10-8 | ~10-4 | [196] | 2019 | Ga2O3 film | 16300 | 55.5 | - | - | ~10-4 | [197] | 2019 | β-Ga2O3 film | ~10-2 | 144.46 | 64711 | ~10-8 | ~10-5 | [144] | 2019 | Ga2O3 film | 0.17 | 8.9 | 4450 | | ~10-3 | [138] | 2019 | PLD | β-Ga2O3 film | ~10-3 | 3.7 | - | - | - | [198] | 2018 | β-Ga2O3 film | 2.5 | 0.33 | - | ~10-6 | <10-4 | [199] | 2018 | β-Ga2O3 film | 2.82 | 0.415 | 197.8 | - | - | [200] | 2019 | MOCVD | β-Ga2O3 film | 34 | 26.1 | >104 | 0.48 | 0.18 | [201] | 2017 | Zn∶β-Ga2O3 film | 10 | >103 | - | 4.5 | 0.8 | [62] | 2017 | β-Ga2O3 film | 12.8 | 12.8 | - | ~10-3 | ~10-3 | [115] | 2018 | β-Ga2O3 film | ~10-4 | 150 | >104 | 1.8 | 0.3 | [182] | 2018 | Zn∶Ga2O3 film | ~10-4 | 1.05 | 512 | 4.5 | 2.2 | [202] | 2018 | Mg∶Ga2O3 film | 0.52 | 8.9 | 4341 | 0.16 | 0.14 | [103] | 2019 | β-Ga2O3 film | - | 46 | >104 | ~10-6 | ~10-5 | [184] | 2019 | ε-Ga2O3 film | 0.023 | 230 | >105 | - | 0.024 | [136] | 2020 | β-Ga2O3 film | ~10-3 | 3930.55 | 92879 | 0.195 | 0.091 | [203] | 2020 | ALD | β-Ga2O3 film | 0.2 | 45.11 | - | ~10-6 | - | [110] | 2017 | α-Ga2O3 film | ~10-3 | 0.76 | - | ~10-7 | <10-4 | [204] | 2018 | α-Ga2O3 film | 0.163 | 1.2 | - | - | - | [205] | 2019 | Ga2O3 film | ~0.01 | 1.34 | - | - | ~10-7 | [206] | 2020 |
|
Table 3. Summary of parameters of Ga2O3 thin films based photodetectors