Study of a Diode-Pumped Nd:YVO4 Laser Passively Q Switched with GaAs

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 22 >Issue 3 >Page 298 > Article

Acta Optica Sinica
Vol. 22, Issue 3, 298 (2002)

Study of a Diode-Pumped Nd:YVO₄ Laser Passively Q Switched with GaAs

[in Chinese]^1、*, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]², [in Chinese]², [in Chinese]², [in Chinese]³, and [in Chinese]³

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¹[in Chinese]

²[in Chinese]

³[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study of a Diode-Pumped Nd:YVO₄ Laser Passively Q Switched with GaAs[J]. Acta Optica Sinica, 2002, 22(3): 298 Copy Citation Text

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Abstract

A passively Q switched laser diode end pumped Nd∶YVO 4 laser is demonstrated in which a GaAs film is used as the saturable absorber. The pulse width, pulse energy and pulse repetition rate of different output coupler are measured. At 4 W pumping power, stable laser pulse as short as 30 ns with 8 μJ energy and 60 kHz pulse repetition rate can be generated with this laser. Meanwhile, the Q switching dynamics is theoretically studied based on the rate equations. Some phenomena generated in the laser are analyzed.

Keywords

Nd∶YVO4 laser passive Q-switching GaAs

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