Influence of Nitrogen Flow Rate on the Structure and Luminescence Properties of Silicon-Rich Silicon Nitride Film Materials in a High Hydrogen Atmosphere

[1] So Y H, Huang S J, Conibeer G, et al. Thin Solid Films, 2011, 519: 5408.

[3] Park N M, Choi C J, Seong T Y, et al. Phys. Rev. Lett., 2001, 86(7): 1355.

[4] Kim T W, Cho C H, Kim B H, et al. Appl. Phys. Lett., 2006, 88(12): 123102-1.

[5] Wang M, Xie M. Ferraioli L, et al. J. Appl. Phys., 2008, 104(8): 083504-1.

[6] Wang M H, Yang D R, Li D S, et al. J. Appl. Phys., 2007, 101(10): 103504-1.

[7] Molinari E M, Rinnert H, Vergnat M. J. Phys. D: Appl. Phys., 2008, 41: 175410.

[8] Lee K M, Kim T H, Hwang J D, et al. Scripta Materialia, 2009, 60: 703.

[9] Kim B H, Cho C H, Kim T W, et al. Appl. Phys. Lett., 2005, 86(9): 091908-1.

[10] Mckel H, Lüdemann R. J. Appl. Phys., 2002, 92(5): 2602.

[11] Molinari M, Rinnert H, Vergnat M. Appl. Phys. Lett., 2001, 79(14): 2172.

[13] Wang M H, Li D S, Yuan Z Z, et al. Appl. Phys. Lett., 2007, 90(13): 131903-1.

[14] Molinari M, Rinnert H, Vergnat M. J. Appl. Phys., 2007, 101(12): 123532-1.

[15] He Y L, Yin C Z, Cheng G X, et al. Appl. Phys., 1994, 75(2): 797.

[16] Langford A A, Fleet M L, Nelson B P, et al. Phys. Rev. B, 1992, 45(23): 13367.

[17] Park N M, Kim S H, Sung G Y, et al. Chemical Vapor Deposition, 2002, 8(6): 254.

[18] Wang W X, Li D H, Liu Z C, et al. Appl. Phys. Lett., 1993, 62(3): 321.

[20] Zhang Longlong, Zhou Bingqing, Zhang Linrui, et al. Bulletin of the Chinese Ceramic Society, 2014, 33(4): 757

[23] Hao H L, Wu L K, Shen W Z. Appl. Phys. Lett., 2007, 91(20): 201922-1.

[24] Mo C M, Zhang L D, Xie C Y, et alT. J. Appl. Phys., 1993, 73(10): 5185.

[25] Mercaldo L V, Esposito E M, Veneri P D, et al. J. Appl. Phys., 2011, 109(9): 093512.

[26] Cullis A G, Canham L T, Calcott P D J. J. Appl. Phys., 1997, 82(3): 909.