Characterization method of PN junction region expansion in HgCdTe device

WENG Bin; ZHOU Song-Min; WANG Xi; CHEN Yi-Yu; LI Hao; LIN Chun

doi:10.11972/j.issn.1001-9014.2017.01.011

[1] Hu W D, Chen X S, Ye Z H, et al. A hybrid surface passivation on HgCdTe long wave infrared detector with in-situ CdTe deposition and high-density hydrogen plasma modification［J］. Applied Physics Letters, 2011, 99(9):091101-091101-3.

[2] Hu W D, Chen X S, Yin F, et al. Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors［J］. Journal of Applied Physics, 2009,105(10):104502-104502-8.

[3] Terterian S, Chu M, Mesropian S, et al. A comparative study and performance characteristics of ion-implanted and heterojunction short-wave infrared HgCdTe focal-plane arrays［J］. Journal of Electronic Materials, 2002, 31(7):720-725.

[4] Haakenaasen R, Colin T, Steen H, et al. Electron beam induced current study of ion beam milling type conversion in molecular beam epitaxy vacancy-doped CdxHg1-xTe［J］. Journal of Electronic Materials, 2000, 29(6):849-852.

[5] White J, Pal R, Dell J M, et al. p-to-n type-conversion mechanisms for HgCdTe exposed to H 2 /CH 4 plasmas［J］. Journal of Electronic Materials, 2001, 30(6):762-767.

[6] Musca C A, Siliquini J F, Smith E P G, et al. Laser beam induced current imaging of reactive ion etching induced n-type doping in HgCdTe［J］. Journal of Electronic Materials, 1998, 27(6):661-667.

[7] Hu, W. D. Chen X. S.,Ye Z. H, et al. Polarity Inversion and Coupling of Laser Beam Induced Current in As-doped Long-wavelength HgCdTe Infrared Detector Pixel Arrays: Experiment and Simulation［J］, Applied Physics Letters, 101, 181108 (2012).

[8] Hu, W. D. Chen X. S.,Ye Z. H, et al., Dependence of ion-implant-induced LBIC novel characteristic on excitation intensity for Long-wavelength HgCdTe-based Photovoltaic Infrared Detector Pixel Arrays［J］, IEEE Journal of Selected Topics in Quantum Electronics, 19,4100107(2013).

[9] Redfern D A, Smith E P G, Musca C A, et al. Interpretation of current flow in photodiode structure using laser beam-induced current for characterization and diagnostics［J］. IEEE Trans.electron.dev, 2006, 53(1):23-31.

[10] Musca C A, Redfern D A, Dell J M, et al. Laser-beam-induced current technique as a quantitative tool for HgCdTe photodiode characterization［J］. Proc Spie, 1999:334-343.

[11] Musca C A, Redfern D A, Smith E P G, et al. Junction depth measurement in HgCdTe using laser beam induced current (LBIC)［J］. Journal of Electronic Materials, 1999, 28(6):603-610.

[12] QiuW.C , Hu W. D.. Laser beam induced current microscopy and photocurrent mapping for junction characterization of infrared photodetectors［J］. Science China Physics Mechanics & Astronomy, 2014, 58(2):1-13.

[13] Qiu W.C , Hu,W. D. Lin T, et al., Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope［J］. Applied Physics Letters, 105,191106 (2014)