• Chinese Journal of Lasers
  • Vol. 41, Issue 11, 1102004 (2014)
Dai Yin*, Li Lin, Yuan Huibo, Qiao Zhongliang, Gu Lei, Liu Yang, Li Te, and Qu Yi
Author Affiliations
  • [in Chinese]
  • show less
    DOI: 10.3788/cjl201441.1102004 Cite this Article Set citation alerts
    Dai Yin, Li Lin, Yuan Huibo, Qiao Zhongliang, Gu Lei, Liu Yang, Li Te, Qu Yi. Study on Simulation of the Small Far Field Divergence Semiconductor Lasers with Mode Expansion Layers[J]. Chinese Journal of Lasers, 2014, 41(11): 1102004 Copy Citation Text show less
    References

    [1] Zhong Li, Wang Jun, Feng Xiaoming, et al.. 808 nm high-power lasers with Al-free active region with asymmetric waveguide structure[J]. Chinese J Lasers, 2007, 34(8): 1037-1042.

    [2] Li Jianjun, Cui Bifeng, Deng Jun, et al.. 980 nm high power semiconductor laser with asymmetric super large optical cavity[J]. Chinese J Lasers, 2013, 40 (11): 1102011.

    [3] Li Te, Hao Erjuan, Li Zaijing, et al.. Optimization of waveguide structure for high power 1060 nm diode laser[J]. J Infrared and Milimeter Wave, 2012, 31(3): 226-230.

    [4] Elliott S N, Smowton P M, Berry G. Optimisation of high power AlGaInP laser diodes for optical storage applications[J]. IEE Proceedings-Optoelectronics, 2006, 153(6): 321-325.

    [5] Smowton P M, Lewis G M, Yin M, et al.. 650-nm lasers with narrow far-field divergence with integrated optical mode expansion layers[J]. IEEE J Selected Topics in Quantum Electronics, 1999, 5(3): 735-739.

    [6] Chen Y C, Waters R G, Dalby R J. Single quantum well laser with vertically integrated passive waveguides[J]. Appl Phys Lett, 1990, 56(15): 1409-1411.

    [7] Yen S T, Lee C P. Theoretical investigation on semiconductor lasers with passive waveguides[J]. IEEE J Quantum Electronics, 1996, 32(1): 4-13.

    [8] Wang Xiaoyan, Zhao Run, Sheng Mu. High-power semiconductor lasers with small divergence[J]. Infrared and Laser Engineering, 2006, 35(3): 302-304.

    [9] An Zhengfeng, Liu Hao, Cheng Hongtai, et al.. Development of the single mode laser chip with small divergence and no bonding[J]. Micro-Nanoelectronic Technology, 2011, 48(6): 353-356.

    [10] Yang Guowen, Xu Junying, Zhang Jinming, et al.. Structure design and analysis of quantum well lasers with low beam divergence[J]. Chinese J Semiconductors, 1996, 17(7): 500-505.

    [11] Jiang Jianping. Semiconductor Lasers[M]. Beijing: Electronic Industry Press, 1998. 88-89.

    [12] Li Yajing, An Zhengfeng, Cheng Guoying, et al.. Study of quantum-well laser with smallf far-field divergence angle[J]. Nano Device and Technology, 2008, 45(11): 635-638.

    [13] Ma Chunsheng, Liu Shiyong. Optical Waveguide Mode Theory[M]. Changchun: Jilin University Press, 2006. 103-108.

    [14] Zheng Xiaogang, Li Te, Lu Peng, et al.. Analysis of temperature characteristics of 980 nm semiconductor laser facet[J]. Chinese J Lasers, 2013, 40(11): 1102004.

    [15] Liang Xuemei, Qin Li, Wang Ye, et al.. 808 nm edge-emitting diode lasers characteristic temperatures[J]. Acta Optica Sinica, 2010, 30(5): 1391-1395.

    [16] Huang Haihua, Liu Yun, Yang Ye, et al.. Temperature characteristics of 850 nm tapered semiconductor lasers[J]. Chinese Optics, 2013, 6(2): 201-207.

    Dai Yin, Li Lin, Yuan Huibo, Qiao Zhongliang, Gu Lei, Liu Yang, Li Te, Qu Yi. Study on Simulation of the Small Far Field Divergence Semiconductor Lasers with Mode Expansion Layers[J]. Chinese Journal of Lasers, 2014, 41(11): 1102004
    Download Citation