• Journal of Semiconductors
  • Vol. 45, Issue 12, 122501 (2024)
Yi Huang, Qiurui Chen, Rongyao Ma, Kaifeng Tang..., Qi Wang, Hongsheng Zhang, Ji Ding, Dandan Xu, Sheng Gao* and Genquan Han|Show fewer author(s)
Author Affiliations
  • School of Optoelectronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, China
  • show less
    DOI: 10.1088/1674-4926/24060009 Cite this Article
    Yi Huang, Qiurui Chen, Rongyao Ma, Kaifeng Tang, Qi Wang, Hongsheng Zhang, Ji Ding, Dandan Xu, Sheng Gao, Genquan Han. Short-circuit failure modes and mechanism investigation of 1200 V planar SiC MOSFETs[J]. Journal of Semiconductors, 2024, 45(12): 122501 Copy Citation Text show less
    (Color online) Single pulse short-circuit test bench. (a) Schematic diagram and (b) physical diagram.
    Fig. 1. (Color online) Single pulse short-circuit test bench. (a) Schematic diagram and (b) physical diagram.
    (Color online) Short-circuit waveform of SiC MOSFETs at 400 V DC voltage. (a) Product A, (b) Product B.
    Fig. 2. (Color online) Short-circuit waveform of SiC MOSFETs at 400 V DC voltage. (a) Product A, (b) Product B.
    (Color online) Short-circuit waveform of SiC MOSFETs at 800 V DC voltage. (a) Product A, (b) Product B.
    Fig. 3. (Color online) Short-circuit waveform of SiC MOSFETs at 800 V DC voltage. (a) Product A, (b) Product B.
    (Color online) Chip surface of post-failure SiC MOSFETs after short circuit. (a) 400 V, (b) 800 V.
    Fig. 4. (Color online) Chip surface of post-failure SiC MOSFETs after short circuit. (a) 400 V, (b) 800 V.
    (Color online) (a) Gate−source leakage current and (b) drain−source leakage current before and after opening the lid.
    Fig. 5. (Color online) (a) Gate−source leakage current and (b) drain−source leakage current before and after opening the lid.
    (Color online) Hot spot location. (a) Over all view of chip, (b) zoomed in the hot spot.
    Fig. 6. (Color online) Hot spot location. (a) Over all view of chip, (b) zoomed in the hot spot.
    (Color online) FIB-TEM image at the hot spot.
    Fig. 7. (Color online) FIB-TEM image at the hot spot.
    (Color online) SiC MOSFET structure schematic diagram.
    Fig. 8. (Color online) SiC MOSFET structure schematic diagram.
    (Color online) Comparison of short-circuit characteristics between simulated and measured devices at 400 V DC bias voltage.
    Fig. 9. (Color online) Comparison of short-circuit characteristics between simulated and measured devices at 400 V DC bias voltage.
    (Color online) (a) Current distribution and (b) temperature distribution for short-circuit end transient at 400 V DC bias voltage.
    Fig. 10. (Color online) (a) Current distribution and (b) temperature distribution for short-circuit end transient at 400 V DC bias voltage.
    (Color online) Comparison of short-circuit characteristics between simulated and measured devices at 800 V DC bias voltage.
    Fig. 11. (Color online) Comparison of short-circuit characteristics between simulated and measured devices at 800 V DC bias voltage.
    (Color online) (a) Electrical-field along SiC/SiO2 interface and (b) impact ionization distribution for short-circuit end transient at 800 V DC bias voltage.
    Fig. 12. (Color online) (a) Electrical-field along SiC/SiO2 interface and (b) impact ionization distribution for short-circuit end transient at 800 V DC bias voltage.
    Yi Huang, Qiurui Chen, Rongyao Ma, Kaifeng Tang, Qi Wang, Hongsheng Zhang, Ji Ding, Dandan Xu, Sheng Gao, Genquan Han. Short-circuit failure modes and mechanism investigation of 1200 V planar SiC MOSFETs[J]. Journal of Semiconductors, 2024, 45(12): 122501
    Download Citation