CdSe/Cd 0.65Zn 0.35Se superlattices were grown by molecular beam epitaxy on substrate GaAs. The structure and exciton optical properties in high quality CdSe/CdZnSe superlattices are investigated by means of XRD spectra, photoluminescence spectra with different excitation power at 77 K and photoluminescence spectra with different temperature. The emission peak from exciton-exciton scattering is observed in CdSe/CdZnSe superlattices. It is validated by photoluminescence spectra with different excitation power and different temperature. The linewidth of the exciton emission becomes broader with increasing temperature. The linewidth at low temperature is due to the alloy composition and well thickness fluctuations, and the linewidth broadening at high temperature is contributed by the interactions among the exciton and LO phonons and ionized donor impurities. The photoluminescence intensities are reduced with increasing temperature, which is mainly due to the thermal dissociation of excitons, i. e., the electrons or holes jump from the wells into the barriers by thermal excitations.