• Acta Physica Sinica
  • Vol. 68, Issue 18, 187104-1 (2019)
Wei-Min Zheng1、*, Hai-Bei Huang2, Su-Mei Li3, Wei-Yan Cong1, Ai-Fang Wang1, Bin Li4、*, and Ying-Xin Song5
Author Affiliations
  • 1School of Space Science and Physics, Shandong University (Weihai), Weihai 264209, China
  • 2School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, China
  • 3School of Information Engineering, Shandong University (Weihai), Weihai 264209, China
  • 4Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 5Jinan Semiconductor Research Institute, Jinan 250014, China
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    DOI: 10.7498/aps.68.20190254 Cite this Article
    Wei-Min Zheng, Hai-Bei Huang, Su-Mei Li, Wei-Yan Cong, Ai-Fang Wang, Bin Li, Ying-Xin Song. Transitions between Be acceptor levels in GaAs bulk[J]. Acta Physica Sinica, 2019, 68(18): 187104-1 Copy Citation Text show less
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    Wei-Min Zheng, Hai-Bei Huang, Su-Mei Li, Wei-Yan Cong, Ai-Fang Wang, Bin Li, Ying-Xin Song. Transitions between Be acceptor levels in GaAs bulk[J]. Acta Physica Sinica, 2019, 68(18): 187104-1
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