Transitions between Be acceptor levels in GaAs bulk

Wei-Min Zheng; Hai-Bei Huang; Su-Mei Li; Wei-Yan Cong; Ai-Fang Wang; Bin Li; Ying-Xin Song

doi:10.7498/aps.68.20190254

Journals >Acta Physica Sinica >Volume 68 >Issue 18 >Page 187104-1 > Article

Acta Physica Sinica
Vol. 68, Issue 18, 187104-1 (2019)

Transitions between Be acceptor levels in GaAs bulk

Wei-Min Zheng^1、*, Hai-Bei Huang², Su-Mei Li³, Wei-Yan Cong¹, Ai-Fang Wang¹, Bin Li^4、*, and Ying-Xin Song⁵

Author Affiliations

¹School of Space Science and Physics, Shandong University (Weihai), Weihai 264209, China

²School of Chemistry and Chemical Engineering, Shandong University, Jinan 250100, China

³School of Information Engineering, Shandong University (Weihai), Weihai 264209, China

⁴Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

⁵Jinan Semiconductor Research Institute, Jinan 250014, China

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DOI: 10.7498/aps.68.20190254 Cite this Article

Wei-Min Zheng, Hai-Bei Huang, Su-Mei Li, Wei-Yan Cong, Ai-Fang Wang, Bin Li, Ying-Xin Song. Transitions between Be acceptor levels in GaAs bulk[J]. Acta Physica Sinica, 2019, 68(18): 187104-1 Copy Citation Text

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Fig. 1. Energy levels of Be acceptors doped in GaAs bulk.掺杂在GaAs材料中Be受主的能级分布及跃迁

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Fig. 2. Far-infrared absorption spectrum for the sample GaAs:Be at 4.2 K.在4.2 K温度下, GaAs:Be样品的远红外吸收谱

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Fig. 3. PL spectrum of sample GaAs:Be at 4.2 K.在4.2 K温度下, GaAs:Be样品的PL光谱

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Fig. 4. Raman spectrum of the sample GaAs:Be at 4.2 K.在4.2 K温度下, GaAs:Be样品的Raman光谱

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跃迁谱线	跃迁能量
	实验值				理论值
	文献[12, 15]		本文		文献[25]
	/cm^–1		/cm^–1	/meV	/meV
G	135	134.42	135	16.74	14.29
D	167	166.76	167	20.71	18.47
C	184	182.30	183	22.69	20.34
E			160 (PL) 161 (Raman)	19.84 19.96	18.04

Table 1.

Comparison of transition energies of Be accepters in GaAs.

掺杂在GaAs中Be受主的跃迁能量的对照

Wei-Min Zheng, Hai-Bei Huang, Su-Mei Li, Wei-Yan Cong, Ai-Fang Wang, Bin Li, Ying-Xin Song. Transitions between Be acceptor levels in GaAs bulk[J]. Acta Physica Sinica, 2019, 68(18): 187104-1

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