• Advanced Photonics Nexus
  • Vol. 4, Issue 2, 026003 (2025)
Ruoyan Ma1,2, Zhimin Guo1,2,3, Dai Chen3, Xiaojun Dai1,2..., You Xiao1,2, Chengjun Zhang3, Jiamin Xiong1,2, Jia Huang1,2, Xingyu Zhang1,2, Xiaoyu Liu1,2, Liangliang Rong1,2,4, Hao Li1,2,4, Xiaofu Zhang1,2,4,* and Lixing You1,2,4,*|Show fewer author(s)
Author Affiliations
  • 1Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology, National Key Laboratory of Materials for Integrated Circuits, Shanghai, China
  • 2Shanghai Key Laboratory of Superconductor Integrated Circuit Technologies, Shanghai, China
  • 3Photon Technology, Jiashan, China
  • 4University of Chinese Academy of Sciences, Center of Materials Science and Optoelectronics Engineering, Beijing, China
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    DOI: 10.1117/1.APN.4.2.026003 Cite this Article Set citation alerts
    Ruoyan Ma, Zhimin Guo, Dai Chen, Xiaojun Dai, You Xiao, Chengjun Zhang, Jiamin Xiong, Jia Huang, Xingyu Zhang, Xiaoyu Liu, Liangliang Rong, Hao Li, Xiaofu Zhang, Lixing You, "Drone-based superconducting nanowire single-photon detection system with a detection efficiency of more than 90%," Adv. Photon. Nexus 4, 026003 (2025) Copy Citation Text show less
    (a) TEM image of the involved NbTiN superconducting thin film. (b) Superconducting to normal transitions for a 55-nm-wide detector. (c) Scanning electron microscope image of the fabricated SNSPDs, where the diameter of the sensitive area is 18 μm. (d) Uniformity of the nanowire width.
    Fig. 1. (a) TEM image of the involved NbTiN superconducting thin film. (b) Superconducting to normal transitions for a 55-nm-wide detector. (c) Scanning electron microscope image of the fabricated SNSPDs, where the diameter of the sensitive area is 18  μm. (d) Uniformity of the nanowire width.
    Temperature dependence of the system detection efficiency as a function of bias current.
    Fig. 2. Temperature dependence of the system detection efficiency as a function of bias current.
    (a) Sketch of the electrical setup, integrating the bias circuit, the amplification circuit, and the pulse converter and counter. (b) Manufactured electrical setup.
    Fig. 3. (a) Sketch of the electrical setup, integrating the bias circuit, the amplification circuit, and the pulse converter and counter. (b) Manufactured electrical setup.
    (a) Photo of drone-based superconducting nanowire single-photon detection system. (b) Bias current dependence of the SDE measured in a GM cryocooler (light green) and in the miniature liquid helium dewar (light blue). The measured IDE as a function of bias current of the drone-based SNSPD system, with a height of 30 m. (c) Dark count rate as a function of bias current under different operating environments.
    Fig. 4. (a) Photo of drone-based superconducting nanowire single-photon detection system. (b) Bias current dependence of the SDE measured in a GM cryocooler (light green) and in the miniature liquid helium dewar (light blue). The measured IDE as a function of bias current of the drone-based SNSPD system, with a height of 30 m. (c) Dark count rate as a function of bias current under different operating environments.
    Ruoyan Ma, Zhimin Guo, Dai Chen, Xiaojun Dai, You Xiao, Chengjun Zhang, Jiamin Xiong, Jia Huang, Xingyu Zhang, Xiaoyu Liu, Liangliang Rong, Hao Li, Xiaofu Zhang, Lixing You, "Drone-based superconducting nanowire single-photon detection system with a detection efficiency of more than 90%," Adv. Photon. Nexus 4, 026003 (2025)
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