[1] Ito K, Nakazawa T. Electrical and optical properties of stannite-type quaternary semiconductor thin films［J］. Japanese Journal of Applied Physics, 1988, 27(11): 2094-2097.
[2] Katagiri H, Sasaguchi N, Hando S, et al. Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of E-B evaporated precursors［J］. Solar Energy Materials and Solar Cells, 1997, 49(1/2/3/4): 407-414.
[4] Shockley W, Queisser H J. Detailed balance limit of efficiency of p-n junction solar cells［J］. Journal of Applied Physics, 1961, 32(3): 510-519.
[5] Barkhouse D, Gunawan O, Gokmen T, et al. Device characteristics of a 10.1% hydrazine-processed Cu2ZnSn(Se,S)4 solar cell［J］. Progress in Photovoltaics, 2012, 20(1): 6-11.
[6] Ma Xinjian, Lin Tao, Feng Shuaichen. Analysis of mono-crystalline silicon solar cells preventing PID coating process［J］. Laser ＆ Optoelectronics Progress, 2015, 52(4): 041601.
[7] Katagiri H, Jimbo K, Yamada S, et al. Enhanced conversion efficiencies of Cu2ZnSnS4-based thin film solar cells by using preferential etching technique［J］. Applied Physics Express, 2008, 1(4): 041201.
[8] Moriya K, Tanaka K, Uchiki H. Fabrication of Cu2ZnSnS4 thin-film solar cell prepared by pulsed laser deposition［J］. Japanese Journal of Applied Physics, 2007, 46(9): 5780-5781.
[9] Tian Hao, Liu Zhengtang, Feng Liping, et al. Influence of annealing temperatures on optical properties of HfSixOy thin films prepared by magnetron sputtering［J］. Acta Optica Sinica, 2012, 32(6): 0631005.
[10] Brammertz G, Buffiere M, Oueslati S, et al. Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells［J］. Applied Physics Letters, 2013, 103(16): 163904.
[11] Li J J, Wang H X, Luo M, et al. 10% efficiency Cu2ZnSn (S, Se)4 thin film solar cells fabricated by magnetron sputtering with enlarged depletion region width［J］. Solar Energy Materials and Solar Cells, 2016, 149: 242-249.
[12] Jo Y H, Mohanty B C, Yeon D H, et al. Single elementary target-sputtered Cu2ZnSnSe4 thin film solar cells［J］. Solar Energy Materials and Solar Cells, 2015, 132: 136-141.
[13] Seol J S, Lee S Y, Lee J C, et al. Electrical and optical properties of Cu2ZnSnS4 thin films prepared by rf magnetron sputtering process［J］. Solar Energy Materials and Solar Cells, 2003, 75(1/2): 155-162.
[14] Kamoun N, Bouzouita H, Rezig B. Fabrication andcharacterization of Cu2ZnSnS4 thin films deposited by spray pyrolysis technique［J］. Thin Solid Films, 2007, 515(15): 5949-5952.
[15] Hergert F, Hock R. Predicted formation reactions for the solid-state syntheses of the semiconductor materials Cu2SnX3 and Cu2ZnSnX4 (X=S, Se) starting from binary chalcogenides［J］. Thin Solid Films, 2007, 515(15): 5953-5956.
[16] Weber A, Mainz R, Unold T, et al. In-situ XRD on formation reactions of Cu2ZnSnS4 thin films［J］. Physica Status Solidi, 2009, 6(5): 1245-1248.
[17] Araki H, Kubo Y, Mikaduki A, et al. Preparation of Cu2ZnSnS4 thin films by sulfurizing electroplated precursors［J］. Solar Energy Materials & Solar Cells, 2009, 93(6/7): 996-999.
[18] Momose N, Htay M T, Yudasaka T, et al. Cu2ZnSnS4 thin film solar cells utilizing sulfurization of metallic precursor prepared by simultaneous sputtering of metal targets［J］. Japanese Journal of Applied Physics, 2011, 50(1): 01BG09.
[19] Tanaka T, Kawasaki D, Nishio M, et al. Fabrication of Cu2ZnSnS4 thin films by co-evaporation［J］. Physica Status Solidi, 2006, 3(8): 2844-2847.
[20] Fernandes P A, Salome P M P, da Cunha A F. Study of polycrystalline Cu2ZnSnS4 films by Raman scattering［J］. Journal of Alloys and Compounds, 2011, 509(28): 7600-7606.
[21] Scragg J J. Copper zinc tin sulfide thin films for photovoltaics: Synthesis and characterisation by electrochemical methods［M］. Berlin: Springer, 2011: 97-108.
[22] Tanaka K, Moritake N, Uchiki H. Preparation of Cu2ZnSnS4 thin films by sulfurizing sol-gel deposited precursors［J］. Solar Energy Materials and Solar Cells, 2007, 91(13): 1199-1201.
