[1] Rudeger Kohler, Alessandro Tredicucci, Fabio Beltram et al.. Terahertz semiconductor heterostructure laser[J]. Nature, 2002, 417(6685): 156～159

[2] Benjamin S. Williams, Hans Callebaut, Sushil Kumar et al.. 3.4-THz quantum cascade laser based on longitudinal-optical-phonon scattering for depopulation[J]. Appl. Phys. Lett., 2003, 82(7): 1015～1017

[3] Wei Shi, Jingzhou Xu, X. C. Zhang. Terahertz generation from Si3N4 covered photoconductive dipole antenna[J]. Chin. Opt. Lett., 2003, 1(5): 308～310

[5] Liying Lang, Qirong Xing, Shuxin Li. Experimental study on terahertz radiation[J]. Chin. Opt. Lett., 2004, 2(11): 677～679

[6] J. A. A. Engelbrecht, I. G. Lee, D. J. L. Venter. Optical characterization of doped and undoped GaAs at 300 K[J]. Infrared Phys., 1987, 27(1): 57～62

[7] M. Hass, B. W. Henvis. Infrared lattice reflection spectra of Ⅲ-Ⅴ compound semiconductors[J]. J. Phys. Chem. Solids, 1962, 23(8): 1099～1104

[8] Ryoichi Fukasawa, Kiyomi Askai, Sidney Perkowitz. Far-infrared reflectance study of coupled longitudinal-optical phonon-hole plasmon modes and transport properties in heavily doped p-type GaAs[J]. Jpn. J. Appl. Phys., 1997, 36(9A): 5543～5548

[9] Z. G. Qian, G. Yu, W. Z. Shen. Growth-dependent phonon characteristics in InN thin films[J]. Physica B, 2002, 318: 180～187

[11] A. L. Krotokov, A. G. U. Perera, W. Z. Shen et al.. Free-carrier absorption in Be- and C- doped GaAs epilayers and far infrared detector applications[J]. J. Appl. Phys., 2001, 89(6): 3295～3300